SI3973DV Search Results

IEC61249-2-21

Abstract: Si3973DV Si3973DV-T1-E3
Contextual Info: Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.087 at VGS = - 4.5 V - 2.7 - 12 0.120 at VGS = - 2.5 V - 2.3 0.165 at VGS = - 1.8 V - 1.5 • Halogen free According to IEC61249-2-21 Definition

40575

Abstract: Si3973DV Si3973DV-T1
Contextual Info: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS

410561

Abstract: 3919 74993 AN609 Si3973DV
Contextual Info: Si3973DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable

72442

Abstract: Si3973DV
Contextual Info: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable

Contextual Info: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS

Si3973DV

Abstract: 72442
Contextual Info: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS

Si3973DV

Abstract: Si3973DV-T1
Contextual Info: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no