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Vishay Siliconix SI2372DS-T1-GE3 MOSFET N-CH 30V 4A/5.3A SOT23-3
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DigiKey ()	SI2372DS-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI2372DS-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI2372DS-T1-GE3	Digi-Reel			1	1 $0.27 10 $0.27 100 $0.27 1000 $0.27 10000 $0.27	Buy Now
Vishay Intertechnologies SI2372DS-T1-GE3
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Bristol Electronics	SI2372DS-T1-GE3		14,421			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI2372DS-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI2372DS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI2372DS-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 30V SOT23		Original	PDF

SI2372DS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) d 0.033 at VGS = 10 V 5.3 0.038 at VGS = 6 V 4.9 0.043 at VGS = 4.5 V 4.6 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested	Original	Si2372DS OT-23 O-236) Si2372DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SPICE Device Model Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si2372DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) d 0.033 at VGS = 10 V 5.3 0.038 at VGS = 6 V 4.9 0.043 at VGS = 4.5 V 4.6 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested	Original	Si2372DS OT-23 O-236) Si2372DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si2372DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	Si2372DS AN609, 5068u 6461u 1836m 9299u 3375m 6027u 7915m 26-Feb-2014	PDF