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Catalog Datasheet	Type	Document Tags	PDF
Si1305BDL Contextual Info: SPICE Device Model Si1305BDL Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1305BDL 18-Jul-08	PDF
4802 Abstract: AN609 174542 Contextual Info: Si1305BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si1305BDL AN609 25-Mar-08 4802 174542	PDF

Catalog Datasheet

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Document Tags

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Si1305BDL

Contextual Info: SPICE Device Model Si1305BDL Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Original

Si1305BDL 18-Jul-08

PDF

4802

Abstract: AN609 174542
Contextual Info: Si1305BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Original

Si1305BDL AN609 25-Mar-08 4802 174542

PDF