SQJ410EP Search Results
SQJ410EP Price and Stock
Vishay Siliconix SQJ410EP-T1_GE3MOSFET N-CH 30V 32A PPAK SO-8 |
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SQJ410EP-T1_GE3 | Digi-Reel | 1 |
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Vishay Intertechnologies SQJ410EP-T1_GE3Trans MOSFET N-CH 30V 32A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ410EP-T1_GE3) |
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SQJ410EP-T1_GE3 | Reel | 20 Weeks | 3,000 |
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SQJ410EP-T1_GE3 | 26,086 |
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SQJ410EP-T1_GE3 | 21 Weeks | 3,000 |
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Vishay Intertechnologies SQJ410EP-T1-GE3MOSFETs RECOMMENDED ALT SQJ4 |
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SQJ410EP-T1-GE3 | Reel | 6,000 | 3,000 |
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SQJ410EP-T1-GE3 | 26 Weeks | 3,000 |
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SQJ410EP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SQJ410EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 32A POWERPAKSO-8 | Original |
SQJ410EP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SQJ410EP-T1-GE3Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested |
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SQJ410EP AEC-Q101 SQJ410EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ410EP-T1-GE3 | |
Contextual Info: SQJ410EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SQJ410EP AN609, 5072m 4090m 1436m 9402m 1095m 1706m 3627m 5485m | |
Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) |
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SQJ410EP AEC-Q101 2002/95/EC SQJ410EP-T1-GE3 11-Mar-11 | |
Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested |
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SQJ410EP AEC-Q101 SQJ410EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET |
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SQJ410EP 2002/95/EC AEC-Q101 SQJ410EP-T1-GE3 18-Jul-08 | |
Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) |
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SQJ410EP AEC-Q101 2002/95/EC SQJ410EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model SQJ410EP www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQJ410EP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET |
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SQJ410EP 2002/95/EC AEC-Q101 SQJ410EP-T1-GE3 11-Mar-11 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
SQJ469ep
Abstract: SQ4483BE
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AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE | |
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Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
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AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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AEC-Q101 VMN-SG2151-1212 | |
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