SQ2325ES Search Results
SQ2325ES Price and Stock
Vishay Siliconix SQ2325ES-T1_GE3MOSFET P-CH 150V 840MA TO236 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SQ2325ES-T1_GE3 | Cut Tape | 6,475 | 1 |
|
Buy Now | |||||
|
SQ2325ES-T1_GE3 | 27,000 | 1 |
|
Buy Now | ||||||
Vishay Intertechnologies SQ2325ES-T1_GE3Power MOSFET, P Channel, 150 V, 840 mA, 1.3 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: SQ2325ES-T1_GE3) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SQ2325ES-T1_GE3 | Reel | 12,000 | 15 Weeks | 3,000 |
|
Buy Now | ||||
|
SQ2325ES-T1_GE3 | 176,175 |
|
Buy Now | |||||||
|
SQ2325ES-T1_GE3 | 3,000 | 3,000 |
|
Buy Now | ||||||
|
SQ2325ES-T1_GE3 | 3,000 | 15 Weeks | 3,000 |
|
Buy Now | |||||
|
SQ2325ES-T1_GE3 | Reel | 12,000 | 3,000 |
|
Buy Now | |||||
|
SQ2325ES-T1_GE3 | 2,959 | 1 |
|
Buy Now | ||||||
|
|
SQ2325ES-T1_GE3 | 17 Weeks | 3,000 |
|
Get Quote | ||||||
|
SQ2325ES-T1_GE3 | Cut Tape | 1,395 | 0 Weeks, 1 Days | 5 |
|
Buy Now | ||||
|
SQ2325ES-T1_GE3 | 16 Weeks | 3,000 |
|
Buy Now | ||||||
Vishay Intertechnologies SQ2325ES-T1-GE3MOSFETs SOT23 150V .84A P-CH MOSFET |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SQ2325ES-T1-GE3 | Reel | 9,000 | 3,000 |
|
Buy Now | |||||
|
SQ2325ES-T1-GE3 | 32,844 |
|
Get Quote | |||||||
Others SQ2325EST1GE3AVAILABLE EU |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SQ2325EST1GE3 | 1,415 |
|
Get Quote | |||||||
Vishay Intertechnologies SQ2325EST1GE3Small Signal Field-Effect Transistor, 0.84A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SQ2325EST1GE3 | 66,915 |
|
Get Quote | |||||||
SQ2325ES Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| SQ2325ES-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 150V 840MA TO236 | Original |
SQ2325ES Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SPICE Device Model SQ2325ES www.vishay.com Vishay Siliconix P-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SQ2325ES 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: SQ2325ES_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
SQ2325ES AN609, 6560u 0366u 8254m 0633m 2805m 1978m 2210u 10-May-11 | |
SQ2325ES
Abstract: SQ2325ES-T1-GE3
|
Original |
SQ2325ES O-236 OT-23) AEC-Q101 2011/65/EU SQ2325ES OT-23 SQ2325ES-T1-GE3 11-Mar-11 SQ2325ES-T1-GE3 | |
SQ2325ESContextual Info: New Product SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg Tested |
Original |
SQ2325ES O-236 OT-23) AEC-Q101 2011/65/EU SQ2325ES OT-23 SQ2325ES-T1-GE3 2011/65/EU 2002/95/EC. | |
|
Contextual Info: SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -150 RDS(on) () at VGS = -10 V 1.77 • TrenchFET power MOSFET • AEC-Q101 qualified ID (A) -0.84 • 100 % Rg and UIS tested Configuration |
Original |
SQ2325ES AEC-Q101 OT-23 O-236) SQ2325ES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
SQ2325ESContextual Info: New Product SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg Tested |
Original |
SQ2325ES O-236 OT-23) AEC-Q101 2011/65/EU SQ2325ES OT-23 SQ2325ES-T1-GE3 2011/65/EU 2002/95/EC. | |
|
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
Original |
AEC-Q101 VMN-SG2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
|
Original |
AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 |