SPU02 Search Results

SP*02N60

Abstract: P-TO252 SPD02N60 SPU02N60
Contextual Info: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified

02N60C3

Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances

02N60S5

Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

SPU02N-09

Abstract: SPU02N-12 SPU02N-05
Contextual Info: MEAN WELL SPU02N SERIES SWITCHING POWER SUPPLY ISO-9001 CERTIFIED MANUFACTURER .UNREGULATED DC OUTPUT .1000VDC I/O ISOLATION .INPUT FILTER:CAPACITOR TYPE .INTERNAL SMD TECHNOLOGY .NO EXTERNAL COMPONENTS REQUIRED .HIGH RELIABILITY / LOW COST .100% BURN-IN TEST

SPD02N60S5

Abstract: 02N60S5 P-TO252 SPU02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances

SP*02N60

Abstract: transistor smd hq
Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252

SPU02N-05

Abstract: 107MA
Contextual Info: SPU02 2W DC-DC Unregulated Single Output Converter series Features : 3000VDC I/O isolation Internal SMD technology Built-in EMI filter Protection: Short circuit Cooling by free air convection Non-conductive plastic case Single in line package 100% full load burn-in test

SPU02L-05

Contextual Info: MEAN WELL SPU02L SERIES SWITCHING POWER SUPPLY ISO-9001 CERTIFIED MANUFACTURER .UNREGULATED DC OUTPUT .1000VDC I/O ISOLATION .INPUT FILTER:CAPACITOR TYPE .INTERNAL SMD TECHNOLOGY .NO EXTERNAL COMPONENTS REQUIRED .HIGH RELIABILITY / LOW COST .100% BURN-IN TEST

02N60S5

Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252

02N60C3

Abstract: P-TO252 SPD02N60C3 SPU02N60C3
Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances

Contextual Info: MEAN WELL SPU02M SERIES SWITCHING POWER SUPPLY ISO-9001 CERTIFIED MANUFACTURER .UNREGULATED DC OUTPUT .1000VDC I/O ISOLATION .INPUT FILTER:CAPACITOR TYPE .INTERNAL SMD TECHNOLOGY .NO EXTERNAL COMPONENTS REQUIRED .HIGH RELIABILITY / LOW COST .100% BURN-IN TEST

DD35

Abstract: 02N60C3
Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated

02N60

Abstract: SPD02N60S5 SPU02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

02N60S5

Abstract: 02N60 SPD02N60S5 SPU02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:

Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances

107MA

Abstract: converter circuit dc to Dc 2V to 24V SPU02N SPU02M-12 SPU02N-05
Contextual Info: SPU02 2W DC-DC Unregulated Single Output Converter series Features : 3000VDC I/O isolation Internal SMD technology Built-in EMI filter Protection: Short circuit Cooling by free air convection Non-conductive plastic case Single in line package 100% full load burn-in test

02N60c3

Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623
Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated

02n60s5

Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances

02n60

Abstract: SPD02N60S5 SPU02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

02N60C3

Abstract: SPD02N60C3
Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances

02N60

Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances

Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A

02N6

Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:

02N60S5

Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity