SC522-M
Abstract: 60407 2SC520A 2SA499-M sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M
Text: 1 .R lrfr O * » » * * ft VcBO m % # m % * m it m % VcEO % « V kbo T a = 25’C ) le Pc & Inui T, MAX (T c= 2512) MIN TYP VCR (V ) MS0801-60403 2 SA499-M F N P M S080I-60403 2SA50Ö-M I 'N P S0902—60581 2 S A 503-M P N P M S0902—60582 2 S A 5 1 0 -M
|
OCR Scan
|
MS0801-60403
2SA499-M
MSOeOI-60403
MS0902
SA503â
SA510-M
MS0902
SA512-M
SC522-M
60407
2SC520A
sc522
2SC512M
2SC519A
m50801
SA512
2SC520A-M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC
|
Original
|
Si7456DP
Si7456DP-T1-E3
Si7456DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
si4838
Abstract: No abstract text available
Text: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
|
Original
|
Si4838DY
Si4838DY-T1-E3
Si4838DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4838
|
PDF
|
si7272
Abstract: No abstract text available
Text: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized
|
Original
|
Si7272DP
Si7272DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7272
|
PDF
|
SI4430B
Abstract: si4430bd
Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested
|
Original
|
Si4430BDY
Si4430BDY-T1-E3
Si4430BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4430B
si4430bd
|
PDF
|
Si4368DY
Abstract: Si4368DY-T1-E3
Text: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for
|
Original
|
Si4368DY
Si4368DY-T1-E3
Si4368DY-T1-GE3
11-Mar-11
|
PDF
|
Si7489DP
Abstract: Si7489DP-T1-E3 Si7489DP-T1-GE3
Text: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si7489DP
Si7489DP-T1-E3
Si7489DP-T1-GE3
11-Mar-11
|
PDF
|
Si4866DY
Abstract: Si4866DY-T1-E3
Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs
|
Original
|
Si4866DY
Si4866DY-T1-E3
Si4866DY-T1-GE3
11-Mar-11
|
PDF
|
Si4430BDY
Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3
Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested
|
Original
|
Si4430BDY
Si4430BDY-T1-E3
Si4430BDY-T1-GE3
11-Mar-11
|
PDF
|
Si7852DP
Abstract: Si7852DP-T1-E3
Text: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
|
Original
|
Si7852DP
Si7852DP-T1-E3
Si7852DP-T1-GE3
11-Mar-11
|
PDF
|
Si7460DP-T1-GE3
Abstract: Si7460DP Si7460DP-T1-E3
Text: Si7460DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.0096 at VGS = 10 V 18 0.012 at VGS = 4.5 V 16 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs
|
Original
|
Si7460DP
Si7460DP-T1-E3
Si7460DP-T1-GE3
11-Mar-11
|
PDF
|
Si4888DY
Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3
Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si4888DY
Si4888DY-T1-E3
Si4888DY-T1-GE3
11-Mar-11
|
PDF
|
Si7960DP
Abstract: No abstract text available
Text: Si7960DP Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.7 0.025 at VGS = 4.5 V 8.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
|
Original
|
Si7960DP
Si7960DP-T1-E3
Si7960DP-T1-GE3
11-Mar-11
|
PDF
|
Si7456DP-T1-E3
Abstract: Si7456DP Si7456DP-T1-GE3
Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC
|
Original
|
Si7456DP
Si7456DP-T1-E3
Si7456DP-T
11-Mar-11
Si7456DP-T1-GE3
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 75 0.011 at VGS = 10 V 28 0.0145 at VGS = 4.5 V 28 Qg (Typ.) 33 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si7148DP
Si7148DP-T1-E3
Si7148DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Si4100DY
Abstract: Si4100DY-T1-E3 Si4100DY-T1-GE3 si4100
Text: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested
|
Original
|
Si4100DY
Si4100DY-T1-E3
Si4100DY-T1-GE3
11-Mar-11
si4100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
|
Original
|
Si4404DY
Si4404DY-T1-E3
Si4404DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4864DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0035 at VGS = 4.5 V 25 0.0047 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
|
Original
|
Si4864DY
Si4864DY-T1-E3
Si4864DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
SI7998DP-T1-GE3
Abstract: si7998dp si7998
Text: New Product Si7998DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.007 at VGS = 4.5 V 30 VDS (V) Channel-1 30 Channel-2 30 Qg (Typ.)
|
Original
|
Si7998DP
Si7998DP-T1-GE3
18-Jul-08
si7998
|
PDF
|
Si7445DP-T1-E3
Abstract: No abstract text available
Text: Si7445DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0077 at VGS = - 4.5 V - 19 0.0094 at VGS = - 2.5 V - 17 0.0125 at VGS = - 1.8 V - 15 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si7445DP
Si7445DP-T1-E3
Si7445DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 12.4 0.020 at VGS = 4.5 V 9.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • High Efficiency PWM Optimized
|
Original
|
Si4892DY
Si4892DY-T1-E3
Si4892DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
eaton el 198
Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com
|
Original
|
877-ETN-CARE
CA08100004E
V3-T2-65
V3-T2-42â
V3-T2-52
V3-T2-39â
V3-T2-41
V3-T9-254
V3-T7-17
CA08100004Eâ
eaton el 198
ITE circuit breakers "cross reference"
WESTINGHOUSE motor life line
westinghouse
ITE circuit breakers
wiring diagram STAR DELTA motor sequential starter
Project Report of smoke alarm using IC 555 doc
ITE/Gould relay j13
MTBF fit IGBT 1200
UNITROL 1000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4561DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a RDS(on) (Ω) 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.035 at VGS = - 10 V - 7.2 0.047 at VGS = - 4.5 V - 6.2 Qg (Typ.)
|
Original
|
Si4561DY
Si4561DY-T1-E3
Si4561DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7956DP Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.105 at VGS = 10 V 4.1 0.115 at VGS = 6 V 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low On-Resistance in New Low Thermal
|
Original
|
Si7956DP
Si7956DP-T1-E3
Si7956DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|