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    Text: Philips Semiconductors •I bbSB'lBl QDE5E55 3M7 APX N AI1ER PHILIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Preliminary specification b?E BFR541 PINNING DESCRIPTION • High power gain PIN • Low noise figure 1 emitter • High transition frequency


    OCR Scan     		QDE5E55 BFR541 BFR541 OT103. IS21P PDF