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    sine wave pwm circuit

    Abstract: 3 phase sine wave pwm c source code 3 phase sine wave pwm circuit 3 phase analog controller sine wave Sine Wave Generator pwm sinewave timing sine wave ups designing UBICOM 3 phase controller sine wave 3 phase sine wave pwm GENERATOR
    Text: Artificial Sine Wave Generation Using SX Communications Controller Application Note11 Chris Fogelklou November 2000 1.0 Introduciton 2.0 Description of Sine Wave Virtual Peripheral Sine waves are used extensively in the telecommunications industry, and are traditionally difficult to implement


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    PDF Note11 AN11-03 sine wave pwm circuit 3 phase sine wave pwm c source code 3 phase sine wave pwm circuit 3 phase analog controller sine wave Sine Wave Generator pwm sinewave timing sine wave ups designing UBICOM 3 phase controller sine wave 3 phase sine wave pwm GENERATOR

    CXLD140-6R8

    Abstract: No abstract text available
    Text: TB62732FU TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62732FU Step-up DC/DC Converter for White LED Driver TB62732FU is the high efficiency Step-up type DC/DC converter that it is designed suitably in constant current lighting of white LED.


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    PDF TB62732FU TB62732FU CXLD140-6R8

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology


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    PDF PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236 PD48288236

    BOOSTER REGULATOR SERIES VBA

    Abstract: 3843 PWM power supply application note FEH 231 PA120 NJU6820 990mx ic la 7833
    Text: NJU6820 40COMMON x 128RGB LCD DRIVER FOR 4,096-COLOR STN DISPLAY ! GENERAL DESCRIPTION The NJU6820 is a 40COMMON x 128RGB LCD driver for 4,096-color STN display. It contains common drivers, RGB drivers, a serial and a parallel MPU interface circuit, an internal LCD power supply,


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    PDF NJU6820 40COMMON 128RGB 096-COLOR NJU6820 440-bit 32-grayscale BOOSTER REGULATOR SERIES VBA 3843 PWM power supply application note FEH 231 PA120 990mx ic la 7833

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    PA120

    Abstract: PC123 Series COM161 NJU6825
    Text: NJU6825 162COMMON x 128RGB LCD DRIVER FOR 4,096-COLOR STN DISPLAY ! GENERAL DESCRIPTION The NJU6825 is a 162COMMON x 128RGB LCD driver for 4,096-color STN display. It contains common drivers, RGB drivers, a serial and a parallel MPU interface circuit, an internal LCD power supply, grayscale palettes and


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    PDF NJU6825 162COMMON 128RGB 096-COLOR NJU6825 832-bit 32-grayscale PA120 PC123 Series COM161

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 TS128MFB72V6J-T Description MBIST and IBIST Test functions The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V6J-T consists of Transparent mode for DRAM test support


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    PDF 240PIN 64Mx8 TS128MFB72V6J-T TS128MFB72V6J-T 72bits DDR2-667 18pcs 64Mx8its 240-pin

    Untitled

    Abstract: No abstract text available
    Text: TS128MFB72V6J-T 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 Description Hot add-on and Hot Remove Capability The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Transparent mode for DRAM test support Fully Buffered DIMM. The TS128MFB72V6J-T consists of


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    PDF TS128MFB72V6J-T 240PIN 64Mx8 TS128MFB72V6J-T 72bits DDR2-667 18pcs 64Mx8its 240-pin

    GPR323A16A

    Abstract: No abstract text available
    Text: GPR323A16A 16M x 16 bit Synchronous DRAM SDRAM Dec. 5, 2008 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS


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    PDF GPR323A16A GPR323A16A

    TC7PA175FU

    Abstract: No abstract text available
    Text: TC7PA175FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PA175FU D-Type Flip-Flop with Clear Features • Operating voltage range: VCC = 1.8~3.6 V • High-speed operation: tpd = 3.5 ns max at VCC = 3.0~3.6 V tpd = 4.6 ns (max) at VCC = 2.3~2.7 V


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    PDF TC7PA175FU TC7PA175FU

    Case751F

    Abstract: PC33880DW PC33880DWB 33-880 SOIC32
    Text: MOTOROLA Document order number: MC33880/D Rev 1, 09/2002 SEMICONDUCTOR TECHNICAL DATA Advance Information 33880 Configurable Octal Serial Switch with Serial Peripheral Interface I/O The 33880 device is an eight output hardware configurable high side/low side switch with 8-bit serial input control. Two of the outputs may be controlled


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    PDF MC33880/D Case751F PC33880DW PC33880DWB 33-880 SOIC32

    TC7MA573FK

    Abstract: US20
    Text: TC7MA573FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MA573FK Low-Voltage Octal D-Type Latch with 3.6 V Tolerant Inputs and Outputs The TC7MA573FK is a high performance CMOS octal D-type latch. Designed for use in 1.8 V, 2.5 V or 3.3 V systems, it


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    PDF TC7MA573FK TC7MA573FK US20

    TC7MZ573FK

    Abstract: US20
    Text: TC7MZ573FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MZ573FK Low Voltage Octal D-Type Latch with 5 V Tolerant Inputs and Outputs The TC7MZ573FK is a high performance CMOS octal D-type latch. Designed for use in 3.3 V systems, it achieves high speed


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    PDF TC7MZ573FK TC7MZ573FK US20

    M5M5V5636GP

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M5M5V5636GPI M5M5V5636GP

    TC7MZ374FK

    Abstract: US20
    Text: TC7MZ374FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MZ374FK Low Voltage Octal D-Type Flip-Flop with 5 V Tolerant Inputs and Outputs The TC7MZ374FK is a high performance CMOS octal D-type flip flop. Designed for use in 3.3 V systems, it achieves high speed


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    PDF TC7MZ374FK TC7MZ374FK US20

    TC7MAR2245FK

    Abstract: US20
    Text: TC7MAR2245FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MAR2245FK Low-Voltage Octal Bus Transceiver with 3.6 V Tolerant Inputs and Outputs The TC7MAR2245FK is a high performance CMOS octal bus transceiver. Designed for use in 1.8, 2.5 or 3.3 V systems, it


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    PDF TC7MAR2245FK TC7MAR2245FK US20

    TC7MA2374FK

    Abstract: US20
    Text: TC7MA2374FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MA2374FK Low-Voltage Octal D-Type Flip-Flop with 3.6 V Tolerant Inputs and Outputs The TC7MA2374FK is a high performance CMOS octal D-type flip-flop. Designed for use in 1.8 V, 2.5 V or 3.3 V systems, it


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    PDF TC7MA2374FK TC7MA2374FK US20

    M5M5V5636GP

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M5M5V5636GP

    TC7MA2373FK

    Abstract: US20
    Text: TC7MA2373FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7MA2373FK Low-Voltage Octal D-Type Latch with 3.6 V Tolerant Inputs and Outputs The TC7MA2373FK is a high performance CMOS octal D-type latch. Designed for use in 1.8 V, 2.5 V or 3.3 V systems, it


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    PDF TC7MA2373FK TC7MA2373FK US20

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


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    PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    Untitled

    Abstract: No abstract text available
    Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/29VF040


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    PDF SMJS820B TMS29F040 29LF040/ 29VF040 SMJS825) A18A17

    diode 8109

    Abstract: DDH0312 NDB7061L NDP7061L W9 diode
    Text: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


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    PDF NDP7061L/ NDB7061L bSD113D 004031b bS01130 diode 8109 DDH0312 NDP7061L W9 diode

    equivalent for transistor tt 2206

    Abstract: equivalent transistor TT 2206 TL032C
    Text: TL032, TL032A ENHANCED JFET LOW-POWER LOW-OFFSET DUAL OPERATIONAL AMPLIFIERS D3152, JULY 1988 - REVISED JANUARY 1991 Maximum Offset Voltage . . . 800 jxV Very Low Power Consumptlon . . . 13 mW Typ High Slew Rate . . . 2.9 V/jis Typ Output Short-Circult Protection


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    PDF TL032, TL032A D3152, TL032 TIL601 equivalent for transistor tt 2206 equivalent transistor TT 2206 TL032C

    MARKING bs170

    Abstract: No abstract text available
    Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


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    PDF BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170