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Rochester Electronics LLC NESG2021M16-T3-A RF SMALL SIGNAL TRANSISTOR
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DigiKey	NESG2021M16-T3-A	Bulk			492	1 - 10 - 100 - 1000 $0.61 10000 $0.61	Buy Now
Renesas Electronics Corporation NESG2021M16-T3-A Trans RF BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold T/R
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Verical	NESG2021M16-T3-A		19,380		569	1 - 10 - 100 - 1000 $0.6234 10000 $0.6234	Buy Now
Quest Components	NESG2021M16-T3-A		4,580			1 $2.0945 10 $2.0945 100 $2.0945 1000 $0.7331 10000 $0.6284	Buy Now
Rochester Electronics	NESG2021M16-T3-A		19,380		1	1 $0.5867 10 $0.5867 100 $0.5515 1000 $0.4987 10000 $0.4987	Buy Now

NESG2021M16 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
NESG2021M16	California Eastern Laboratories	HIGH FREQUENCY TRANSISTOR	Original	PDF
NESG2021M16	California Micro Devices	NPN SiGe HIGH FREQUENCY TRANSISTOR	Original	PDF
NESG2021M16FB	NEC	NPN SiGe RF Transistor for Low Noise, High-gain Amplification 6-pin Lead-less Minimold (M16, 1208 Package)	Original	PDF
NESG2021M16FB-T3	NEC	NPN SiGe RF Transistor for Low Noise, High-gain Amplification 6-pin Lead-less Minimold (M16, 1208 Package)	Original	PDF
NESG2021M16-T3	California Micro Devices	NPN SiGe HIGH FREQUENCY TRANSISTOR	Original	PDF
NESG2021M16-T3-A	California Micro Devices	NECs NPN Sige High Frequency Transistor	Original	PDF

NESG2021M16 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NESG2021M16 Abstract: NESG2021M16-T3 S21E Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz	Original	PDF	NESG2021M16 NESG2021M16 NESG2021M16-T3 NESG2021M16-T3 S21E
NEC JAPAN Abstract: NESG2021M16 NESG2021M16-T3 Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications	Original	PDF	NESG2021M16 NEC JAPAN NESG2021M16 NESG2021M16-T3
Untitled Abstract: No abstract text available Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz	Original	PDF	NESG2021M16 NESG2021M16 NESG2021M16-A PU10393EJ03V0DS
Untitled Abstract: No abstract text available Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications	Original	PDF	NESG2021M16 NESG2021M16-A M8E0904E
NESG2021M16 Abstract: NESG2021M16-T3 NESG2021M16-T3-A Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz	Original	PDF	NESG2021M16 NESG2021M16-A M8E0904E NESG2021M16 NESG2021M16-T3 NESG2021M16-T3-A
NESG2021M16 Abstract: NESG2021M16-T3-A S21E Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz	Original	PDF	NESG2021M16 NESG2021M16 NESG2021M16-T3-A S21E
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications	Original	PDF	NESG2021M16 NESG2021M16 NESG2021M16-T3 PU10393EJ01V0DS
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	PDF	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	PDF	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PDF	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

NESG2021M16 Abstract: NESG2021M16-T3 NESG2021M16-T3-A Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	M8E0904E NESG2021M16 NESG2021M16-T3 NESG2021M16-T3-A
m33 tf 130 Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539 Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP	Original	PDF	NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	M8E0904E
SMD transistor M05 Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE	Original	PDF	10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
mc10087f1 Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.	Original	PDF	IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF
SMD M05 sot Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial	Original	PDF	08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

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NESG2021M16 Search Results

NESG2021M16 Price and Stock

Rochester Electronics LLC NESG2021M16-T3-A

Renesas Electronics Corporation NESG2021M16-T3-A

NESG2021M16 Datasheets (6)

NESG2021M16 Datasheets Context Search

NESG2021M16

NEC JAPAN

Untitled

Untitled

NESG2021M16

NESG2021M16

Untitled

FET marking code g5d

nec mosfet marked v75

2SK2500

FSQ510 Equivalent

SMD M05 sot23

ne3511s02 s2p

transistor marking T79 ghz

NESG2021M16

m33 tf 130

Untitled

SMD transistor M05

BB 509 varicap diode

mc10087f1

BGU7073

SMD M05 sot