MT3S06S Search Results

Contextual Info: TO SHIBA MT3S06S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06S Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB (VCE = 3V, IC = 7mA, f = 2 GHz)

MT3S06S

Contextual Info: TO SH IBA MT3S06S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06S Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure NF = 1.6 dB V C E = 3 V, In = 3 mA, f = 2 GHz TTicrh (T-ain IS o i J 2 = 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1

MT3S04AS

Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AS high dc current gain transistor
Contextual Info: MT6L57AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L57AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Mounted Devices Q1: SSM TESM Q2: SSM (TESM) MT3S06S (MT3S06T) Three pin (SSM/TESM) type part No.

MT3S03AS

Abstract: MT3S03AT MT3S06S MT3S06T MT6L58AS
Contextual Info: MT6L58AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Mounted Devices Q1: SSM TESM Q2: SSM (TESM) MT3S06S (MT3S06T) Three pin (SSM/TESM) type part No.

Contextual Info: TOSHIBA MT3S06S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06S Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2i e|2 = 9.5 dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)

MT3S06S

Contextual Info: MT3S06S 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S06S ○ VHF~UHF 帯低電圧動作•低雑音タイプ • 単位: mm 雑音特性が優れています。 : NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz : |S21e|2 = 9.5dB

MT3S06S

Contextual Info: MT3S06S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm

MT3S06S

Contextual Info: MT3S06S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm

MT3S06S

Contextual Info: MT3S06S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm

Contextual Info: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c

Contextual Info: TOSHIBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES

MT3S06S

Abstract: MT3S06T MT3S08T MT6L54E
Contextual Info: MT6L54E Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No. Q1: SSM (TESM)

MT3S06S

Abstract: MT3S06T MT6C06E
Contextual Info: TO SH IBA MT6C06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C06E Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 Three-pins (SSM/TESM) mold products are

MT3S04AS

Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
Contextual Info: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold

Contextual Info: MT6L58AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6

Contextual Info: MT6L54S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L54S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6

Contextual Info: MT6L58AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6

Contextual Info: MT6L57AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AT VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

MT6P06E

Abstract: MT3S06S MT3S06T
Contextual Info: TO SH IBA MT6P06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P06E Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B- Q1/Q2 : SSM (TESM)

MT3S03AS

Abstract: MT3S03AT MT3S06S MT3S06T MT6L58AE
Contextual Info: TO SH IBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 6ö V -O 1 1 ir> IT) in O O o 2

MT3S06S

Abstract: MT3S06T MT3S08T MT6L54E
Contextual Info: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No.

MT3S04AS

Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
Contextual Info: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold