MG75Q1 Search Results

Contextual Info: TOSHIBA MG75Q1BS11 M G 7 5 Q 1 BS1 1 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT U nit in mm HIGH POWER; SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O.us Max. Low Saturation Voltage: V q e (sat) = 2.7V (Max.)

TOSHIBA IGBT DATA BOOK

Abstract: TOSHIBA IGBT MG75Q1BS11 IGBT Guide
Contextual Info: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

Contextual Info: TO SHIBA MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M5 • • 2~05.6±o.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

MG75Q1BS11

Contextual Info: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

Contextual Info: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode

MG75Q1JS40

Contextual Info: T O SH IB A MG75Q1JS40 TOSHIBA GTR MODULE m •« ■ SILICON N CHANNEL IGBT r , 7 r n 1 i<;An m agr ■ w mm ■ ^ur HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage

Contextual Info: TO SH IBA MG75Q1JS40 MG75Q1 JS40 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT HIGH P O W E R SW IT C H IN G APPLICATIO N S. Unit in mm C H O PPE R APPLIC ATIO N S. • • High Input Impedance High Speed : tf=0.5/^s Max. trr = 0.5/iS (Max.)

Contextual Info: T O SH IB A MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • 3-M 5 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: T O SH IB A MG75Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 Q 1 BS1 1 U n it in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance H ig h S p eed : tf=1.0,«s Max. Low Saturation Voltage: V q e ( s a t ) ~

MG75Q1ZS50

Contextual Info: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode

TOSHIBA IGBT DATA BOOK

Abstract: MG75Q1ZS50
Contextual Info: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode

Contextual Info: MG75Q1BS11 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage: V q e (sat) —2.7V (Max.) Enhancement-Mode

MG75Q1JS40

Abstract: mg75q1j
Contextual Info: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

MG75Q1BS11

Contextual Info: TOSHIBA M G75Q 1BS11 MG75Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O^s Max. Low Saturation Voltage: Vce (sat) —2.7V(Max.) Enhancement-Mode

Contextual Info: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)

Contextual Info: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

ba ph 20v diode

Abstract: MG75Q1 MG75Q1JS40
Contextual Info: TOSHIBA MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q1JS40 HIGH POWER SWITCHING APPLICATIONS. Unit in mm CHOPPER APPLICATIONS. 3 -M 5 2 -0 5 .6 ± O .3 High Input Impedance High Speed : tf=0.5/^s Max. trr= 0.5/^s (Max.) Low Saturation Voltage

Contextual Info: T O SH IB A MG75Q1ZS50 MG75Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG75Q1BS11 M G 7 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage: Vqe ( s a t ) ~ 2.7V(Max.)

AST0

Abstract: MG75Q1ZS50
Contextual Info: TOSHIBA MG75Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q1ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.) Enhancement-Mode

Contextual Info: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG40001US41

Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50