MG100Q2YS51 Search Results

transistor s51a

Contextual Info: MG100Q2YS51A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)

Contextual Info: TOSHIBA MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TENTATIVE TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH PO W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3,t<s Max. Inductive Load

LA-591

Contextual Info: T O S H IB A MG100Q2YS51 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IG8T MG100Q2YS51 HIGH POW ER SW ITCHING APPLICATIONS M O T O R C O NTRO L APPLICATIONS H igh In p u t Im pedance H igh Speed : tf= 0 .3 //s Max. Inductive Load Low S a tu ratio n Voltage

MG100Q2YS51

Contextual Info: MG100Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 Unit: mm High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)

MG100Q2YS51

Contextual Info: TOSHIBA MG100Q2YS51 MG1 0 0 Q 2 Y S 5 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)

Contextual Info: T O SH IB A TENTATIVE MG100Q2YS51A MG100Q2YS51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. @Inductive Load Low Saturation Voltage

MG100Q2YS51A

Contextual Info: TOSHIBA TENTATIVE MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage

MG100Q2YS51

Contextual Info: MG100Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode

Contextual Info: TOSHIBA MG100Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS51 HIGH POWER SWITCHING APPLICATIONS M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)

100Q2YS51

Contextual Info: TO SH IBA M G100Q 2YS51A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG 100Q2YS51 A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. / ^ \ T _3 _J .* _T _ 3 ^ u / i ii u u c ti v t i L /u a u

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

GT30J322

Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

2253A

Abstract: MG100Q2YS51A 100Q2YS51
Contextual Info: TO SH IBA M G100Q 2YS51A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG 100Q2YS51 A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. / ^ \ T _3 _J .* _T _ 3 ^ u / i ii u u c ti v t i L /u a u