MBR3100 Search Results

RECTIFIER DIODES Motorola

Abstract: MBR3100-D voltage rectifier diode motorola
Contextual Info: MOTOROLA Order this document by MBR3100/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifier MBR3100 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,

MARKING CODE DO-214AC

Abstract: Device marking code 27 DO-214AC
Contextual Info: MBR3100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V Features IO (A) 100V VF (MAX) (V) IR (MAX) (mA) • Low Forward Voltage: 0.85V at +25C @ +25°C @ +25°C  High Surge Current Capacity 0.5  Operating Junction Temperature: +150C

Contextual Info: MBR 3100 SCHOTTKY DIE SPECIFICATION TYPE: MBR3100 RSingle □Dual Anode General Description: 100 V 3 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

MBR3100G

Abstract: mbr3100rlg MBR3100 MBR3100RL
Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

MBR3100G

Abstract: MBR3100 MBR3100RL MBR3100RLG
Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

Contextual Info: MBR3100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V Features IO (A) 100 VF (MAX) (V) IR (MAX) (mA) • Low Forward Voltage: 0.85V at +25C @ +25°C @ +25°C  High Surge Current Capacity 0.5  Operating Junction Temperature: +150C

MBR3100

Abstract: MBR3100G MBR3100RL MBR3100RLG
Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

DIODE mbr3100

Abstract: B3100 MBR3100 MBR3100RL
Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,

Contextual Info: MBR3100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V Features IO (A) 100 VF (MAX) (V) IR (MAX) (mA) • Low Forward Voltage: 0.85V at +25C @ +25°C @ +25°C  High Surge Current Capacity 0.5  Operating Junction Temperature: +150C

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

B3100

Abstract: MBR3100 MBR3100RL
Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MBR3100

Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR3100 Single Anode General Description: 100 V 3 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

Taiwan Semiconductor

Contextual Info: Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR3100 Main Product Characteristics General Description The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in

Contextual Info: DIGITRON SEMICONDUCTORS MBR370-MBR3100 3A SCHOTTKY RECTIFIERS MAXIMUM RATINGS Rating Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current MBR 370 380 390 3100 70 80 90 100 Unit

MBR370

Abstract: MBR390
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR370 MBR380 MBR390 MBR3100 A x ia l Lead R e c tifiers . . . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal

B3100

Abstract: MBR3100 MBR3100RL external lead finish
Contextual Info: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

cree mc-e driver

Abstract: DN06051 panasonic MCE NCP1014LEDR2GEVD Single-Stage Flyback NCP1014LEDR2GEVB Cree XP-E R4 application LED driver NCP1014LED Cree XLamp XP-E R4
Contextual Info: DN06051/D Design Note – DN06051/D Improving the Power Factor of Isolated Flyback Converters for Residential ENERGY STAR LED Luminaire Power Supplies Device NCP1014 Application LED Driver Input Voltage 90 to 265 Vac Output Power Up to 8 Watts Topology Flyback

ru 94vo circuit

Abstract: ATH15T033-9S transistor SMD t05 ATH15T033-9 PTH03010W TR-332 BSS138 diodes mtbf
Contextual Info: ATH15T033 Series —3.3-V Input 15-A, 3.3-V Input Non-Isolated Wide-Output Adjust Power Module REVISION 00 3DEC2003 Features NOMINAL SIZE = • Up to 15-A Output Current • 3.3-V Input Voltage • Wide-Output Voltage Adjust (0.8 V to 2.5 V) • Efficiencies up to 95 %

schematic diagram 48V solar charge controller

Abstract: Solar mppt schematic schematic diagram 12V solar charge controller Solar Charge Controller circuit PWM 12v Solar Charge Controller diagram solar PWM charge controller circuit Diagram schematic diagram 48V solar controller Solar Charge Controller mppt for 1.5 KW Solar Charge Controller Circuit PWM schematic diagram 12V solar controller
Contextual Info: Design Note – DN06054/D Reference Design for Solar Power MPPT Controller Device Application Input Voltage NCP1294 Solar Street Lighting 12-24 V Output Voltage A 13.2V Output Current A Topology 2.0A Table 1: NCP1294 Output Statistics Characteristic Output Voltage