MAY05 Search Results

RG-187 cable

Abstract: ASTM-B-196 MIL-W-16878 7078a 201144-1
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E VIS IO N S 16 AJ LTR DESCRIPTION AV AV1 DATE APVD DWN REVISED PER EC 0 S 1 4 - 01 6 3 - 0 5 1 1 MAY05 REVISED PER E C O - 0 9 - 0 2 0 9 3 5

Contextual Info: 4 3 LOC DIST R E V IS IO N S CM 54 LTR DESCRIPTION EC 0 G 3 B 1A MATERIAL: CONNECTOR CONTACTS - CONT ACT S A C C E P T 1 8 I NSULATI ON DIAMETER. 1035 DWN DATE 04 APVD BSV DPB 2 3 MAY05 NYLON U L 9 4 V - 0 B L A C K . 0 . 3 0 [ . 0 1 2 ] THI CK C O P P E R A L L OY

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 2 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION LOC ALL RIGHTS RESERVED. HT DI5T 0 0 R E V IS IO N S H LTR DESCRIPTION NOTES: H I RO S E C O M P A T I B L E , 2 . 0 M M MATI NG HEI GHT. 1 0 0 % E L E C T R I CA L TEST I NG FOR:

DR332-xxxAE

Abstract: PT61023EL PT61020L bourns lm np 1005L SRU8043 SM540-1 LM-LP-1165 CW10 LM-NP LM-LP-1001
Contextual Info: April, 2005 Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal TS E TIV ONEN C U P IND COM Bourns Transformers Now Available in Lead Free Versions CORRECTIONS The following part numbers incorrectly showed the addition of the “L” suffix to indicate the lead free

DR332-xxxAE

Abstract: CM10 CM25 CM32 CM45 CS20 CS32 CW20 SDR1005-xxxX SDR1806-XXXX
Contextual Info: May, 2005 Manufacturers Representatives Corporate Product Line Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal TS E TIV ONEN C U P IND COM - REMINDER Lead Free Chip Inductors and Power Inductors Replace Tin-Lead Versions after June 30, 2005

Si2307BDS-T1-E3

Abstract: Si2307BDS
Contextual Info: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.078 @ VGS = −10 V −3.2 0.130 @ VGS = −4.5 V −2.5 VDS (V) −30 30 D TrenchFETr Power MOSFET D RoHS Compliant TO-236 (SOT-23) G 1 3 S Ordering Information: Si2307BDS-T1—E3 (Lead (Pb)-Free)

VPS05178

Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 9V
Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

ELM32418LA

Contextual Info: 单 N 沟道 MOSFET ELM32418LA-S •概要 ■特点 ELM32418LA-S 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=20A ·Rds on < 15mΩ (Vgs=10V) ·Rds(on) < 27mΩ (Vgs=7V) ■绝对最大额定值 项目

smd transistor marking DP

Abstract: PDTA143Z TRANSISTOR SMD MARKING CODE X D PDTC143ZU PDTA143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143Z series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 25 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;

MOSFET TRANSISTOR SMD MARKING CODE vl

Abstract: transistor smd code marking KEY smd transistor marking vbg marking VBG vbg marking code smd transistor marking IL TRANSISTOR SMD MARKING CODE UA marking CIG
Contextual Info: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK223-50Y DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK224-50Y QUICK REFERENCE DATA

Contextual Info: A B C D E G F H REVISIONS +.0016 +0.04 .173 4.40 - .0008 - 0.02 .787 20.00 1 .148 3.75 REV DESCRIPTION, ECN, EAR NO. DATE APP'D G ADDED SCREWS PER ECN E07190 JUN08/07 K.L. H REVISED PLATING NOTE PER EAR 13777 OCT07/10 K.L. J REVISED PLATING NOTE AUG08/12 A.G.

a 1009

Abstract: VPS05178
Contextual Info: BF 1009 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 9 V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: DO SECTION -9 x4,0 = 3 6 ,0 A MAX. SCALE DIM ENSIONS -37,9- -0 ,9 5 NOT IN A -A M E T R IC mm 19 PROJECTION NOTES: M A T E R IA L C O N T A C T S ; M A T E R IA L H O U S IN G ; ACTI O N — PIN AREA 4,0 - THIRD ANGLE PHOSPHORBRONZE G LA S S E IL L E D P O LY E S T E R

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. 4A COPYRIGHT - 6 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S P LTR DESCRIPTION A PLC HOUSING CONTACT MATERIAL: MATERIAL: REV THERMOPLASTIC, PHOSPHOR

5748481-6

Abstract: HD-22 5748481-5 tray drawing tray 25 x 25
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL 2 P U B L IC A T IO N R IG H TS LOC D IS T RESERVED. REVISIO N S 00 C O P Y R IG H T D E S C R IP T IO N D1 R EVISED PER 11m a r 11 RK HMR ECO-11-004835 DATE CODE HOUSING PBT, RATED, CELER

smd TRANSISTOR code marking 36

Abstract: PDTA143 PDTC143TU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143T series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

SMD DIODE 512

Abstract: smd sot23 marking l6 SMD MARKING CODE L6 smd schottky diode marking BP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT720 Schottky barrier diode Product specification Supersedes data of 1999 May 26 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier diode FEATURES BAT720 PINNING • Ultra high switching speed

PDTA143XE

Abstract: PDTC143XE PDTA143X smd code marking LP PDTA143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Mar 14 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;

MARKING SMD npn TRANSISTOR R

Abstract: TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 27 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

p1504bdg

Contextual Info: Single N-channel MOSFET ELM32418LA-S •General description ■Features ELM32418LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=20A Rds(on) < 15mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=7V)

DR332-xxxAE

Abstract: SRU8043 LM-LP-1001 LM-LP-1002 LM-LP-1003 LM-LP-1004 LM-LP-1005 LM-LP-1165 LM-NP-1001-B1 SM-LP-5001
Contextual Info: April, 2005 Reliable Electronic Solutions Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal TS E TIV ONEN C U P IND COM Bourns Transformers Now Available in Lead Free Versions

VPS05178

Contextual Info: BF 1005 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

fcc22

Contextual Info: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE APP'D G ADDED SCREWS PER ECN E07190 JUN08/07 K.L. OCT07/10 K.L. H +.0016 +0.04 .173 4.40 - .0008 - 0.02 .787 20.00 1 REVISED PLATING NOTE PER EAR 13777 .148 3.75 1 .295 7.50 .472±.003 12.00±0.08

NS9360B-0-C177

Abstract: NET 50-QIT-3 NS9360B-0-I155 DC-ME-01T-S NS9750B-0-C200 NET 40-QIT-4 db09f UNC20 NS7520B-1-I46 NS9750B
Contextual Info: Digi International RoHS Compliant Product Information Item Description Plan Compliant Note Sample - Production Date Multiport Serial Cards 76000001 4 Port DB9F DTE Cable RoHS Jun-06 76000002 4 Port DB9F RS422 Cable RoHS Feb-06 76000003 4 Port DB9M DTE Cable