MA721WK Search Results

MA721WA

Abstract: MA3X721 MA3X721D MA3X721E MA721 MA721WK
Contextual Info: Schottky Barrier Diodes SBD MA3X721D, MA3X721E (MA721WA, MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 MA3X721D 1 Cathode 2 Cathode 3 Anode MA3X721E

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X721D (MA721WA), MA3X721E (MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10

MA3X721

Abstract: MA3X721D MA3X721E MA721 MA721WA MA721WK V10330
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X721D (MA721WA), MA3X721E (MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain

MA721WA

Abstract: MA3X721 MA3X721D MA3X721E MA721 MA721WK marking m3f
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X721D (MA721WA), MA3X721E (MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10

MA3X721D

Abstract: MA3X721E MA721WA MA721WK panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X721D, MA3X721E (MA721WA, MA721WK) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition

Contextual Info: Schottky Barrier Diodes SBD MA3X721D, MA3X721E (MA721WA, MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 MA3X721D 1 Cathode 2 Cathode 3 Anode MA3X721E

Diode Marking WA

Abstract: marking m3f MA721WA
Contextual Info: MA111 Schottky Barrier Diodes SBD MA721WA, MA721WK Silicon epitaxial planer type 2.8 –0.3 Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current Single Double Single Double Single Double 30

MA3X721

Abstract: MA3X721D MA3X721E MA721 MA721WA MA721WK
Contextual Info: Schottky Barrier Diodes SBD MA3X721D (MA721WA), MA3X721E (MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X721D (MA721WA), MA3X721E (MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10

MA3X721

Abstract: MA3X721D MA3X721E MA721 MA721WA MA721WK
Contextual Info: Schottky Barrier Diodes SBD MA3X721D, MA3X721E (MA721WA, MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package

MA3X721

Abstract: MA3X721D MA3X721E MA721 MA721WA MA721WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X721D (MA721WA), MA3X721E (MA721WK) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

FC54M

Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
Contextual Info: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the