M52S16161A Search Results
M52S16161A Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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M52S16161A | Elite Semiconductor Memory Technology | 512K x 16-Bit x 2Banks Synchronous DRAM | Original | |||
M52S16161A-10TG | Elite Semiconductor Memory Technology | 512K x 16-Bit x 2Banks Synchronous DRAM | Original | |||
M52S16161A-8BG | Elite Semiconductor Memory Technology | 512K x 16-Bit x 2Banks Synchronous DRAM | Original | |||
M52S16161A-8TG | Elite Semiconductor Memory Technology | 512K x 16-Bit x 2Banks Synchronous DRAM | Original |
M52S16161A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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M52S16161A
Abstract: M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG
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Original |
M52S16161A 16Bit M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG | |
Contextual Info: M52S16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page) |
Original |
M52S16161A 16Bit M52S16161A | |
Contextual Info: ESMT M52S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page) |
Original |
M52S16161A 16Bit M52S16161A | |
Contextual Info: ESMT M52S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page) |
Original |
M52S16161A 16Bit M52S16161A | |
Mobile SDRAMContextual Info: ESMT M52S16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) |
Original |
M52S16161A 16Bit M52S16161A Mobile SDRAM | |
0.65mm pitch BGA
Abstract: M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A
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Original |
M52S16161A 16Bit M52S16161A 0.65mm pitch BGA M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A | |
Contextual Info: ESMT M52S16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page) |
Original |
M52S16161A 16Bit M52S16161A | |
M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
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Original |
256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII |