M29F200B Search Results

Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS

Contextual Info: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T M29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

00D3H

Abstract: M29F200 M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F200BB

Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Features • Single 5V±10% supply voltage for Program, Erase and Read operations ■ Access time: 45, 50, 70, 90ns ■ Programming time – 8µs per Byte/Word typical

M29F200B

Abstract: M29F400B M29W200B QRFL0009 quality control procedure st STMICROELECTRONICS MSL PACKAGES
Contextual Info: QRFL0009 QUALIFICATION REPORT M29F200B, M29W200B T6X-U35: 2 Mbit x8/x16 Single Supply Flash Memory INTRODUCTION The M29F200B and M29W200B are 2 Mbit Single Supply (respectively 5V and 3V) Flash memory products with Boot Block partitioning and organized as 256 KByte of 8 bits each or 128 KWord of 16 bits each.

M29F200BB

Abstract: M29F200BT
Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS

M29F200

Abstract: M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word

P1510

Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F200T and M29F200B are replaced respectively by the M29F200BT and M29F200BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

Contextual Info: M29F200T M29F200B SINGLE SUPPLY 2 Megabit x8/x16, Block Erase FLASH MEMORY TARGET SPECIFICATION DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

M29F200

Abstract: M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F200BB

Abstract: M29F200BT JESD97 M29F200 M29F200B
Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45, 50, 70, 90ns PROGRAMMING TIME – 8µs per Byte/Word typical

C1195

Abstract: m29f200b problem AN1195 M29F200 M29F200B M29F200BB M29F200BT M29W200B M29W200BB M29W200BT
Contextual Info: AN1195 APPLICATION NOTE Software Drivers for the M29F200B and M29W200B Flash Memories CONTENTS • INTRODUCTION ■ THE M29F200B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F200B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM

Contextual Info: M29F200T M29F200B SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

M29F200

Abstract: M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

A13D

Abstract: 29F200T 1/A13D 1/SMD a13d
Contextual Info: M29F200T M29F200B SGS-THOMSON IM 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|js by Byte / 16ns by Word typical

M29F200BB

Abstract: M29F200BT AD1022
Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■

Contextual Info: SGS-mOMSON M29F200T M29F200B MKMilLBSTBOllDIES 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical

29F200B

Contextual Info: M29F200T M29F200B SGS-THOMSON 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 7 MEMORY BLOCKS

Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F200T M29F200B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

M29F200

Abstract: M29F200B M29F200T
Contextual Info: W , S G S -T H O M S O N k7# . M29F200T M29F200B 2 Mb x8/x16, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|us by Byte / 1 6|as by W ord typical

Contextual Info: M29F200T M29F200B SINGLE SUPPLY 2 Megabit x8/x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

M29F200BB programmer

Abstract: JESD97 M29F200 M29F200B M29F200BB M29F200BT
Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Features • Single 5V±10% supply voltage for Program, Erase and Read operations ■ Access time: 45, 50, 70, 90ns ■ Programming time – 8µs per Byte/Word typical