LZ1418E100R Search Results
LZ1418E100R Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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LZ1418E100R |
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NPN Microwave Power Transistor | Original | |||
LZ1418E100R |
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Microwave Linear Power Transistor | Original | |||
LZ1418E100R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
LZ1418E100R |
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NPN microwave power transistor | Scan | |||
LZ1418E100R,114 |
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LZ1418E100R - LZ1418E100R - NPN microwave power transistor | Original |
LZ1418E100R Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: N AMER PHILIPS/DISCRETE DbE D ttiS3T31 D01SQ31 1 • LZ1418E100R T -3 S -U M IC R O W AVE LIN EAR POW ER TR AN SISTO R N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in c.w. conditions in m ilitary and professional applications. |
OCR Scan |
ttiS3T31 D01SQ31 LZ1418E100R T-33-H | |
LZ14Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES LZ1418E100R PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR |
OCR Scan |
OT443A LZ1418E100R LZ14 | |
LZ1418E100RContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A |
Original |
LZ1418E100R OT443A SCA53 127147/00/02/pp12 LZ1418E100R | |
LZ1418E100R
Abstract: data transistor scans
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LZ1418E100R T-33-U T-33-il LZ1418E100R data transistor scans | |
LZ1418E100R
Abstract: SC15
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LZ1418E100R OT443A. LZ1418E100R SC15 | |
TDA8361E
Abstract: tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent
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VY27329-2 30-Sep-02 30-Dec-02 VY27340A2 VY27340A1 01-Jun-02 TDA8361E tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent | |
BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
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BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 | |
Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
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RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S | |
bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
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OCR Scan |
1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 | |
transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
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SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 | |
Philips tea1090
Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
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DN-41 LO9585/WD LO9585 LO9700 OQ8845T/K3 OQ8868HP/K6 QFP47) X2G-BUK5R3-100B Philips tea1090 tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713 | |
LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
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BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R | |
Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18 |
OCR Scan |
LEE1015TA LBE2003S LBE2009S LCE2009S LTE21009R LTE21015R LTE21025R LWE2010S LWE2015R LAE4001R | |
LTE-3201
Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
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OCR Scan |
bS3T31 D01fc 6000Q OT-100 LBE2003S FO-45 LCE2003S FO-46 LBE2009S LTE-3201 FO-163 lte4002s LCE2009S LTE21009R LUE2009S | |
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
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BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 | |
Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S |
OCR Scan |
btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45 | |
FO-229Contextual Info: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18 |
OCR Scan |
E4001R LTE4002S LTE42005S LTE42008R LTE42012R T-100 FO-41B FO-229 |