LN166 Search Results

LN166

Abstract: LNA2904L
Contextual Info: Infrared Light Emitting Diodes LNA2904L LN166 GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 10 mW/sr (min.) 1.0 For optical control systems Good radiant power output linearity with respect to input current

LNA2904L

Abstract: LN166
Contextual Info: Infrared Light Emitting Diodes LNA2904L LN166 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 7.65±0.2 (1.0) 3.9±0.31 (1.0) 11.5±1.0 • High-power output, high-efficiency: Ie = 10 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors

LNA2904L

Abstract: LN166
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2904L (LN166) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 10 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

2003 iff

Contextual Info: Panasonic Infrared Light Emitting Diodes LN166 GaAs Infrared Light Emitting Diode U nit : mm 05 . 0+0.2 For optical control systems • Features i • H igh-pow er output, high-efficiency : Ie = 10 m W /sr min. • Light emitting spectrum suited for silicon photodetectors

Infrared Emitting Diode

Abstract: LN166
Contextual Info: Panasonic Infrared Light Emitting Diodes LN166 GaAs Infrared Light Emitting Diode U nit : mm 05 . 0+0.2 For optical control systems • Features i • H igh-pow er output, high-efficiency : Ie = 10 m W /sr min. • Light emitting spectrum suited for silicon photodetectors

Contextual Info: Panasonic Infrared Light Emitting Diodes LN166 G aAs Infrared Light Emitting Diode 05.0+0.2 For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 10 mW /sr min. Light emitting spectrum suited for silicon photodetectors

Contextual Info: Panasonic Infrared Light Emitting Diodes LN166 G aAs Infrared Light Em itting Diode Unit : mm jj5.0±0._2 For o ptical control system s • Features • • • • • High-power output, high-efficiency : Ie = 10 mW /sr min. Light emitting spectrum suited for silicon photodetectors

Contextual Info: Infrared Light Emitting Diodes LNA2904L LN166 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 7.65±0.2 (1.0) 3.9±0.31 11.5±1.0 13.5±1.0 M Di ain sc te on na tin nc ue e/ d • High-power output, high-efficiency: Ie = 10 mW/sr (min.)

LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

LT3SA

Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40

LN9705

Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1

PR002-2

Abstract: mru2 PR0022
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

B029A

Abstract: UN039
Contextual Info: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005

Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli­ Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2