L3B72SS Search Results

MMBZ5227B 8B

Abstract: sg 81a 25CC MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5231B MMBZ5232B MMBZ5233B
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 12E D I L3b72SS QOTTìDb d | '-Il-07 MMBZ5226B thru MMBZ5257B MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA CASE 318-05, STYLE 8 SOT-23 TO-236AA/AB THERMAL CHARACTERISTICS Characteristic Sym bol M ax Unit Pd 225 mW 1.8 m wrc

zener diode 9CA

Abstract: do-34 302 zener diode BZV55C3VO MLL5221B mLL4687 BZV55C4V3 BZV55C6V2 BZV55C12 BZV55C15
Contextual Info: MOTOROLA SC D I O D E S / O P T O hME D • h3b7E5S 00flS437 S 3T M0T7 SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.2 Surface Mounted — continued SECTION 4.2.4.2.2 500 mW LEADLESS (DO-34 BODY SIZE) MULTIPLE PACKAGE QUANTITY (MPQ)

MUR5015

Abstract: MUR5020 jc 5010 MUR5010 MUR 5020 diode mur5020 MUR5005 F10T
Contextual Info: MOTOROLA SC D I O D E S / O P T O L3ti 7BSS D0fibS13 =174 « H O T ? b4E D MUR5005 MUR5010 MUR5015 MUR5020 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUR502Q IB a Motorola Preferred Device ULTRAFAST RECTIFIERS 50 A M P E R E S 50 to 200 V O L T S S W ITC H M O D E POW ER R E C TIFIE R S

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA *1 VDE UL CSA ® ® ® ® SETI SEMKO DEMKO NEMKO BABT G l o b a lO p to is o la to r ^ 6-Pin DIP Optoisolators Darlington Output No Base Connection MOC8030 MOC8050 [CTR s 300% Min] [CTR s 500% Min] Motorola Preferred Devices

3Ft 6PIN

Abstract: 3FT 6-pin
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO VDE UL & ®®®® CSA SETI 8EMKO DEMKO NEMKO BABT GlobalOptolsolator 6-Pin DIP Optoisolators Transistor Output CNY17-1 {CTR » 40-80% CNY17-2* [CTR •93-126%] CNY17-3* [CTR ■100 -200%] The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium

MV2213

Abstract: MV2201 MV2112 TO-92
Contextual Info: 6367255 MOTOROLA SC <OIODES/OPTO> 89D 77452 General Purpose Abrupt Junction Tuning Diodes continued _ , s* High Volume * W S& m l- i . V. " ; CASE 318-02 5v V •):r, ■•■;.• /.- t o -236 a a ' -CASE 182-02 5 2-Lead TO-92 2.5 450 2.5 400 MV2103

Contextual Info: MOTOROLA Order this document by MMSF7P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F7P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 30 VOLTS

U10120

Contextual Info: MOTOROLA Order this document by MUR10120E/D SEMICONDUCTOR TECHNICAL DATA SCANSWITCH Power Rectifier M UR10120E For High and Very High Resolution Monitors This state-of-the-art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and

1n53338

Abstract: 1N53348
Contextual Info: MOTOROLA SC DIOBES/OPTO 3TE D El b3L7ESS 00fl3flEM T E3MOT7 MOTOROLA T SEM IC O N D U C T O R L" — - iH TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

SC146

Abstract: thyristor BT 200
Contextual Info: MOTOROLA SC DI O D E S / O P T O b4E J> b3fc>7255 DDÖbl BT 5S7 SC141 SC146 Triacs Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.

Contextual Info: MOTOROLA O rder th is docum ent by MBD301/D SEMICONDUCTOR TECHNICAL DATA MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital