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    SML1001RBN

    Abstract: No abstract text available
    Text: SEMELAB PLC _ m bOE D m 0133107 GGDOSTb MflM H S U L B i _ MOS POWER 4 TO-24Zr SEME LAB SM L1001R BN SM L901R BN 1000V 900V 11.0A 1.00Í2 11.0A 1.0012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF O-24Zr L1001R L901R SML901RBN SML1001RBN O-247AD SML1001RBN

    L601R

    Abstract: l8075 l1001 l6040
    Text: IMI Sem elab Power M anagem ent Division 4 GENERATION POWER M OSFET DIE SEMELAB - 105 SEMELAB- 1 0 4 O • D ie S ize = 0 .2 9 0 ” x 0.2 5 0" P rim e T yp e s SM L1004 SM L802R 4 D ie S ize = 0 .1 9 9 ” x 0 .2 0 3 " S o u rc e P a d s = 0 .0 3 5 ” D ia.


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    PDF L1004 L802R L601R L1002R L6060 L1001R L8075 L6040 l1001 l6040

    sml20m40bfn

    Abstract: L8030
    Text: im i^i llll Sem elab Power M anagem ent Division 4 GENERATION HERMETIC POWER MOSFETS Package b v dss R d s ON PD W atts Q g(n C ) O hm s lD(Cont.) Am ps Ciss(pF) Volts (Typ) (Typ) 0.260 36.0 830 11560 454 SM L10026DFN 0.500 22.0 595 5560 227 SM L10050CFN


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    PDF L10026DFN L10050CFN SML1001R1AN L1001R1HN SML1001 L1002RAN L1002RCN L1002R4AN L1002R4CN sml20m40bfn L8030

    01-3316

    Abstract: No abstract text available
    Text: SEMELAB PLC bOE T> m 013316? 000D73D 3S3 • S M L B INI _ i s MOS POWER = V r= IN I ä L1001R1AN 1000V 9.5A 1.1 Oft SML901R1AN 900V 9.5A 1.1 OQ L1001R3AN 1000V 8.5A 1.30Q SML901R3AN 900V 8.5A 1.3012 SEM E LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF 000D73D SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 901R1AN 1001R1 901R3AN 1001R3 100mS 01-3316