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    Samsung Semiconductor KM6164002BJ-12

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    Bristol Electronics KM6164002BJ-12 2,106
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    Samsung Semiconductor KM6164002BJ-10

    256K X 16 STANDARD SRAM, 10 ns, PDSO44
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    Quest Components KM6164002BJ-10 324
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    Samsung Electro-Mechanics KM6164002BJ-12

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    NexGen Digital KM6164002BJ-12 1
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    Samsung Electronics Co. Ltd KM6164002BT-15

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    Component Electronics, Inc KM6164002BT-15 69
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    KM6164002B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6164002BIJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIJ-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIT-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIT-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIT-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BJ-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BJI-15 Samsung Electronics IC SRAM CHIP ASYNC SINGLE 5V 4MBIT 256K x 16 15NS 44SOJ Original PDF
    KM6164002BT-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BT-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BT-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF

    KM6164002B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616400

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY PRELIMINARY CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original
    PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F KM616400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original
    PDF KM6164002B, KM6164002BI 256Kx16 250mA 240mA 230mA 44-TSOP2-400F

    512X16

    Abstract: KM6164002B 512X16 sram
    Text: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random


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    PDF KM6164002B, KM6164002BI 256Kx KM6164002B I/O16 KM6164002BJ 44-SOJ-400 KM6164002BT 512X16 512X16 sram

    Untitled

    Abstract: No abstract text available
    Text: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random


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    PDF KM6164002B, KM6164002BI KM6164002B 304-bit 71b4142 G03b70Q KM6164002Bl 44-TS

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997


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    PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


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    PDF KM6164002B, KM6164002BI 256Kx16 44-SOJ-400 44-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002Bi CMOS SRAM 2S6KX16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002B-10 : 260mA(Max.)


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    PDF KM6164002B, KM6164002Bi 2S6KX16 KM6164002B-10 260mA KM6164002B 255mA 250mA KM6164002BJ

    SRAM sheet samsung

    Abstract: No abstract text available
    Text: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark


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    PDF KM6164002B, KM6164002BI 256Kx16 SRAM sheet samsung

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target


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    PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


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    PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L