KM44C1010B Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 T b 4 m 2 GDlSTOb 332 ■ KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1010B is a high speed CMOS 1,048,576x4 Dynamic Random Access Memory. Its

ICT 20 PIN PLASTIC 300 MIL DIP

Contextual Info: KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: I rac • • • • • • • • • • • tcAC tRC 110ns KM44C1010B-6 60ns 15ns KM44C1010B-7 70ns 20ns 130ns

1Mx4

Abstract: 20-PIN KM44C1000BLT KM44C1002BJ
Contextual Info: M E M O R Y IC s FUNCTION G UIDE Dynamic RAM Continued Capacity 4 M bit Part Number Organization KM44C1000BZ 1Mx4 1Mx4 1Mx4 KM44C1000BT KM44C1000BTR KM44C1OOOBV KM44C1000BVR 1Mx4 Speed(ns) CMOS Fast Page CMOS CMOS CMOS CMOS Fast Page Fast Page Fast Page