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IXTB30N100L Price and Stock

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Littelfuse Inc IXTB30N100L MOSFET N-CH 1000V 30A PLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTB30N100L	Tube			300	1 - 10 - 100 - 1000 $50.10163 10000 $50.10163	Buy Now
Newark	IXTB30N100L	Bulk			300	1 - 10 - 100 $52.51 1000 $52.51 10000 $52.51	Buy Now
IXYS Corporation IXTB30N100L MOSFETs 30 Amps 1000V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTB30N100L					1 - 10 - 100 - 1000 $51.18 10000 $51.18	Get Quote
Future Electronics	IXTB30N100L	Tube			300	1 - 10 - 100 $55.83 1000 $55.83 10000 $55.83	Buy Now
TTI	IXTB30N100L	Tube			300	1 - 10 - 100 - 1000 $50.13 10000 $50.13	Buy Now
TME	IXTB30N100L				1	1 $84.57 10 $67.2 100 $60.44 1000 $60.44 10000 $60.44	Get Quote
IXYS Integrated Circuits Division IXTB30N100L MOSFET DIS.30A 1000V N-CH PLUS264-3 LINEAR THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTB30N100L					1 $92.7934 10 $92.7934 100 $86.7228 1000 $86.7228 10000 $86.7228	Get Quote

IXTB30N100L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTB30N100L		IXYS	Power MOSFETs with Extended FBSOA		Original	PDF

IXTB30N100L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 30A Ω 450mΩ G PLUS264TM S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTB30N100L PLUS264TM 30N100L 11-27-12-B
IXTB30N100L Abstract: t30n100l Text: Linear Power MOSFET IXTB30N100L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40	Original	PDF	IXTB30N100L 264TM 30N100L 5-07-A IXTB30N100L t30n100l
30n100 Abstract: IXTB30N100L 30n10 Text: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on = = ≤ 1000V 30A Ω 450mΩ N-Channel Enhancement Mode Avalanche Rated PLUS264TM G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTB30N100L PLUS264TM 30N100L 5-07-A 30n100 IXTB30N100L 30n10
Untitled Abstract: No abstract text available Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTB30N100L RDS on = = ≤ 1000V 30A Ω 450mΩ N-Channel Enhancement Mode Avalanche Rated PLUS264TM Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTB30N100L PLUS264TM 30N100L 5-07-A
IXAN0068 Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability	Original	PDF	IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L