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    IXGH30 Search Results

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    IXGH30 Price and Stock

    IXYS Corporation IXGH30N60C3D1

    IGBT 600V 60A 220W TO247
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    DigiKey IXGH30N60C3D1 Tube 1,381 1
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    Mouser Electronics IXGH30N60C3D1 307
    • 1 $6.07
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    TTI IXGH30N60C3D1 Tube 150 30
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    IXYS Corporation IXGH30N60A

    IGBT 600V 50A 200W TO247AD
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    IXYS Corporation IXGH30N60B

    IGBT 600V 60A 200W TO247AD
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    IXYS Corporation IXGH30N60B2

    IGBT 600V 70A 190W TO247
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    IXYS Corporation IXGH30N60B4

    IGBT 600V 66A 190W TO247
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    IXGH30 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH30B60BD1 IXYS HiPerFASTTM IGBT with Diode Original PDF
    IXGH30H30 IXYS 300V HiPerFET IGBT Original PDF
    IXGH30N120B3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 300W TO247AD Original PDF
    IXGH30N120C3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 48A 250W TO247AD Original PDF
    IXGH30N30 IXYS Hiperfast IGBT Original PDF
    IXGH30N50 IXYS IGBT 30 Amps, 500-600 Volts Scan PDF
    IXGH30N50 IXYS Power MOSIGBTs Scan PDF
    IXGH30N50A IXYS Power MOSIGBTs Scan PDF
    IXGH30N60 IXYS Low Vce(sat) IGBT High Speed IGBT Original PDF
    IXGH30N60 IXYS IGBT 30 Amps, 500-600 Volts Scan PDF
    IXGH30N60 IXYS Power MOSIGBTs Scan PDF
    IXGH30N60A IXYS Low VCE(sat) IGBT High speed IGBT Original PDF
    IXGH30N60A IXYS Power MOSIGBTs Scan PDF
    IXGH30N60AU1 IXYS High Speed IGBT with Diode Scan PDF
    IXGH30N60B IXYS 600V HiPerFAST IGBT Original PDF
    IXGH 30N60B2 IXYS HiPerFAST IGBT Original PDF
    IXGH30N60B2 IXYS IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Original PDF
    IXGH30N60B2D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 190W TO247AD Original PDF
    IXGH30N60B4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 66A 190W TO247 Original PDF
    IXGH30N60BD1 IXYS 600V HiPerFAST IGBT with diode Original PDF

    IXGH30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGH30N60B

    Abstract: IXGT30N60B
    Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms


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    PDF IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXGH30N60B IXGT30N60B

    8-8NS

    Abstract: No abstract text available
    Text: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


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    PDF IXGH30N60B4 IC110 O-247 338B2 8-8NS

    30N30

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF IXGH30N30 O-247 30N30

    30n30

    Abstract: IXGH30N30
    Text: HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF IXGH30N30 O-247 30N30 30n30 IXGH30N30

    IXGH30N60B4

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


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    PDF IXGH30N60B4 IC110 O-247 062in. 338B2 IXGH30N60B4

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200


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    PDF IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 IC110 204ns O-263 O-247 30N120B3 0-06-09-A

    IXGH30N120C3H1

    Abstract: ixgh30n120 G30N120C3 tf 185 IC100
    Text: Preliminary Technical Information IXGH30N120C3H1 GenX3TM 1200V IGBT VCES = 1200V = 24A IC100 VCE sat ≤ 4.2V = 42ns tfi(typ) High speed PT IGBTs for 10-50kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGH30N120C3H1 IC100 10-50kHz O-247AD 30N120C3H1 IXGH30N120C3H1 ixgh30n120 G30N120C3 tf 185 IC100

    G30N60

    Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710
    Text: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz IC110 O-263 O-220 G30N60 IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


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    PDF IXGH30N60U1 Junc-Case620m delay100nà time200nà time500nÃ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC100 = 24A VCE sat ≤ 4.2V tfi(typ) = 42ns IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IC100 IXGH30N120C3H1 10-50kHz O-247AD 30N120C3H1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT VCES IC110 VCE sat tfi(typ) IXGH30N60B4 Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


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    PDF IC110 IXGH30N60B4 O-247 338B2

    IXGA30N60C3

    Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3
    Text: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF 40-100kHz IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 IC110 O-263 IC110 O-220AB O-247 30N60C3 IXGH30N60C3 G30N60C3

    ixgh30n60c3d1

    Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
    Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110 O-247) O-268 O-247 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3

    IXGH30N120B3

    Abstract: ixgh30n120 G30N120B3 IXGA30N120B3 30n12 204ns
    Text: GenX3TM 1200V IGBTs IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching = = ≤£ = 1200V 30A 3.5V 204ns TO-263 (IXGA) G Symbol Test Conditions E Maximum Ratings VCES TC = 25°C to 150°C 1200


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    PDF IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 IC110 204ns O-263 O-247 O-220 30N120B3 IXGH30N120B3 ixgh30n120 G30N120B3 IXGA30N120B3 30n12 204ns

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N50 Transistors N-Channel IGBT V BR CES (V)500 V(BR)GES (V)30 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case600m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8.0


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    PDF IXGH30N50 Junc-Case600m delay100n time200n

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8


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    PDF IXGH30N60AU1 Junc-Case620m delay100nà time200nà time500nÃ

    Untitled

    Abstract: No abstract text available
    Text: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


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    PDF IXGH30N30 Junc-Case620m delay100nà time200nà time700nÃ

    IXGA30N60C3C1

    Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
    Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings


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    PDF IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 IF110 O-220AB O-247 IXGH30N60C3C1 30N60C3

    IXGH30N60C3D1

    Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
    Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ


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    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 ID110 IXGH30N60C3D1 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1

    30n60

    Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2


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    PDF IXGH30 N60U1 N60AU1 30N60U1 30N60AU1 30n60 IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A

    14055B

    Abstract: No abstract text available
    Text: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous


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    PDF IXGH30N60B IXGT30N60B O-268 -247A 14055B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C


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    PDF IXGH30N60BD1 150PC 15CFC; O-247

    30N60

    Abstract: No abstract text available
    Text: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO


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    PDF IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60

    L-1047

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous


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    PDF IXGH30N60B IXGT30N60B 13/10Nm/lb O-247 O-268 L-1047