IXGA12N60C Search Results

Contextual Info: HiPerFASTTM IGBT IXGA12N60C IXGP12N60C VCES IC25 VCE sat typ tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20

IXGP12N60C

Contextual Info: HiPerFASTTM IGBT IXGA12N60C IXGP12N60C VCES IC25 VCE sat typ tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20

12n60c

Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30

IXGA 12N60C

Contextual Info: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM

ixgr32n60cd1

Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
Contextual Info: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1

Contextual Info: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ

IXGN40N60

Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Contextual Info: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES

12n60c

Abstract: IXGC 12N60C transistor 12n60c IXGA12N60C IXGC12N60CD1 12N60CD1
Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

IXGC 12N60C

Abstract: 12N60C
Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

SGH80N60RUFD

Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Contextual Info: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)