IXFX24N100 Search Results
IXFX24N100 Price and Stock
Littelfuse Inc IXFX24N100Q3MOSFET N-CH 1000V 24A PLUS247-3 |
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IXFX24N100Q3 | Tube | 267 | 1 |
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IXFX24N100Q3 | Bulk | 300 |
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IXYS Corporation IXFX24N100MOSFET N-CH 1000V 24A PLUS 247 |
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IXFX24N100 | Tube | 30 |
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IXYS Corporation IXFX24N100FMOSFET N-CH 1000V 24A PLUS247-3 |
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IXFX24N100F | Tube | 30 |
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IXYS Corporation IXFX24N100Q3MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A |
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IXFX24N100Q3 | 300 |
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IXFX24N100Q3 | Tube | 300 |
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IXFX24N100Q3 | 200 | 1 |
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IXFX24N100 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IXFX24N100 |
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1000V HiPerFET power MOSFET | Original | |||
IXFX24N100F |
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1000V HiPerRF power MOSFET | Original | |||
IXFX24N100Q3 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 24A PLUS247 | Original |
IXFX24N100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information IXFK24N100Q3 IXFX24N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings |
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IXFK24N100Q3 IXFX24N100Q3 300ns O-264 PLUS247 24N100Q3 | |
Contextual Info: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK24N100Q3 IXFX24N100Q3 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings |
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IXFK24N100Q3 IXFX24N100Q3 300ns O-264 24N100Q3 | |
IXFX24N100F
Abstract: IXFK24N100F PLUS247
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IXFK24N100F IXFX24N100F 250ns 247TM 00A/s, 338B2 IXFX24N100F IXFK24N100F PLUS247 | |
IXFX24N100
Abstract: IXFK24N100 PLUS247
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IXFK24N100 IXFX24N100 250ns O-264 24N100 10-17-08-C IXFX24N100 IXFK24N100 PLUS247 | |
Contextual Info: VDSS = 1000V ID25 = 24A Ω RDS on ≤ 390mΩ ≤ 250ns trr IXFK24N100F IXFX24N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions |
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250ns IXFK24N100F IXFX24N100F 247TM 338B2 | |
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFK24N100 IXFX24N100 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 1000V 24A Ω 390mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V |
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IXFK24N100 IXFX24N100 250ns O-264 24N100 10-17-08-C | |
24N10Contextual Info: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C |
OCR Scan |
IXFK24N100 24N100 to150 24N10 | |
IXAN0009
Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
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IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w | |
Contextual Info: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G |
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24N100 247TM IXFK24N100/IXFX24N100 405B2 | |
ixfk24n100Contextual Info: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM |
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24N100 247TM IXFK24N100/IXFX24N100 405B2 ixfk24n100 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
TO-264 weightContextual Info: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038 |
OCR Scan |
IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight | |
ne 22 mosfet
Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
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OCR Scan |
ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 |