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    IXFH110N25T Search Results

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    IXFH110N25T Price and Stock

    Littelfuse Inc IXFH110N25T

    MOSFET N-CH 250V 110A TO247AD
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    DigiKey IXFH110N25T Tube 15 1
    • 1 $8.69
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    • 100 $5.42567
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    Newark IXFH110N25T Bulk 300
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    RS IXFH110N25T Bulk 8 Weeks 30
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    • 100 $7.66
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    IXYS Corporation IXFH110N25T

    MOSFETs 110 Amps 0V
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    Mouser Electronics IXFH110N25T
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    Future Electronics IXFH110N25T Tube 30
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    Bristol Electronics IXFH110N25T 29
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    Quest Components IXFH110N25T 23
    • 1 $12.9603
    • 10 $8.6402
    • 100 $8.6402
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    TTI IXFH110N25T Tube 300
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    TME IXFH110N25T 267 1
    • 1 $7.39
    • 10 $6.2
    • 100 $5.98
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    IXYS Integrated Circuits Division IXFH110N25T

    MOSFET DIS.110A 250V N-CH TO247AD HIPERFET
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    Ozdisan Elektronik IXFH110N25T 21
    • 1 $9.46088
    • 10 $9.46088
    • 100 $8.6008
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    IXFH110N25T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH110N25T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 110A TO-247 Original PDF

    IXFH110N25T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    110N25T

    Abstract: IXFH110N25T
    Text: IXFH110N25T TrenchHVTM Power MOSFET HiPerFETTM VDSS ID25 RDS on = 250V = 110A Ω ≤ 24mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFH110N25T O-247 110N25T 8-11-08-A IXFH110N25T

    Untitled

    Abstract: No abstract text available
    Text: TrenchTM HiperFETTM Power MOSFET VDSS ID25 IXFH110N25T = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFH110N25T O-247 110N25T 5-14-12-B

    IXFH110N25T

    Abstract: No abstract text available
    Text: IXFH110N25T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFH110N25T O-247 110N25T 5-14-12-B IXFH110N25T

    Untitled

    Abstract: No abstract text available
    Text: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250


    Original     		PDF IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD. 110N25T 5-14-12-B

    Untitled

    Abstract: No abstract text available
    Text: IXFV110N25T IXFV110N25TS TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFV110N25T IXFV110N25TS PLUS220 PLUS220SMD 110N25T 5-14-12-B