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    IXFB30N120P Search Results

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    IXFB30N120P Price and Stock

    Littelfuse Inc IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264
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    DigiKey IXFB30N120P Tube 302 1
    • 1 $41.95
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    • 100 $32.5324
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    RS IXFB30N120P Bulk 8 Weeks 25
    • 1 -
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    • 100 $50.32
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    IXYS Corporation IXFB30N120P

    MOSFETs 30 Amps 1200V 0.35 Rds
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    Mouser Electronics IXFB30N120P 795
    • 1 $41.95
    • 10 $38.62
    • 100 $32.53
    • 1000 $32.53
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    Newark IXFB30N120P Bulk 219 1
    • 1 $43.63
    • 10 $37.1
    • 100 $35.12
    • 1000 $35.12
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    Future Electronics IXFB30N120P Tube 300
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    • 100 $35.56
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    TTI IXFB30N120P Tube 300
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    • 1000 $32.53
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    TME IXFB30N120P 1
    • 1 $44.06
    • 10 $39.55
    • 100 $36.92
    • 1000 $36.92
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    IXYS Integrated Circuits Division IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics IXFB30N120P 1,000
    • 1 $51.804
    • 10 $34.536
    • 100 $34.536
    • 1000 $34.536
    • 10000 $34.536
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    IXFB30N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB30N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A PLUS264 Original PDF

    IXFB30N120P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFB30N120P

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET VDSS = 1200 V ID25 = 30 A Ω RDS on ≤ 350 mΩ ≤ 300 ns trr N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C VGSS Maximum Ratings 1200 V Continuous


    Original     		PDF IXFB30N120P PLUS264TM 30N120P IXFB30N120P

    nf950

    Abstract: ixFB30N120P 30N120 30N120P
    Text: IXFB30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D nf950 ixFB30N120P 30N120

    30N120P

    Abstract: mosfet IXFB 30N120P IXFB30N120P nf950
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB30N120P 300ns PLUS264TM 30N120P 1-07-A mosfet IXFB 30N120P IXFB30N120P nf950

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB30N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P