IRFY330 Search Results

IRFY330 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFY330		Semelab	N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package		Original	PDF
IRFY330		Semelab	N-Channel Power MOSFET for HI-REL Applications		Scan	PDF
IRFY330C		Semelab	N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package		Original	PDF
IRFY330SM		Semelab	Hermetically Sealed N-Channel Power MOSFET for Hi-Reliability Applications		Scan	PDF

IRFY330 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFY330C Abstract: No abstract text available Text: IRFY330C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 5.5A RDS(ON) = 1.2Ω Ω 1.0 (0.039)	Original	PDF	IRFY330C O257AB O257AB O220M) 13-Sep-02 IRFY330C
transistor 9527 Abstract: 9527 irfy330 tr 9527 Text: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	IRFY330 O-257AB O220M O-257AB) transistor 9527 9527 irfy330 tr 9527
IRFY330 Abstract: No abstract text available Text: IRFY330 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 5.5A RDS(ON) = 1.2Ω Ω 1.0 (0.039)	Original	PDF	IRFY330 O257AB O257AB O220M) 13-Sep-02 IRFY330
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	IRFY330 O-257AB O220M O-257AB)
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	PDF	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	PDF	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
250JUA Abstract: IRFY330 LE17 Text: bGE D I 0133107 OQOQSSô ti7D • SMLB I SEMELAB PLC SEMELAB IRFY330 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE	OCR Scan	PDF	IRFY330 T0220 T0220M T0220SM 20Kfi) 00A//it 00A/Ms 300/xs, 250JUA IRFY330 LE17