IRFE91 Search Results

IRFE9120

Abstract: JANTX2N6845U JANTXV2N6845U LCC-18
Contextual Info: PD -93988 IRFE9120 JANTX2N6845U JANTXV2N6845U [REF:MIL-PRF-19500/563] 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE9120 BVDSS -100V RDS(on) ID 0.60Ω −3.5A The leadless chip carrier (LCC) package represents the

IRFE9120

Abstract: IRFE9123 motorola power FET
Contextual Info: MOTOROLA SC XSTRS/R F 1EE D | T~ ^ b3ti7a5H OOfibTOO 3 | IRFE9120 ' IRFE9123 M AXIM UM RA TIN GS IRFE9123 Unit 100 60 Vdc 100 60 Symbol IRFE9120 Drain-Source Voltage Voss Drain-Gate Voltage R q s = 20 kfí VDGR Rating Gale-Source Voltage Vdc ±20 Vg s CASE 648-08, STYLE 2

uc 5518

Abstract: 5518 IRFE9120
Contextual Info: 2N6845LCC4 IRFE9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont)

Contextual Info: International pd-9.i ?2ia IO R Rectifier IRFE9110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P -C H A N N E L -100Volt,1.2a, HEXFET The leadless chip carrier LCC package represents the logical next step in the continual evolution of surface m ount technology. The LCC provides

Contextual Info: PD - 91716B IRFE9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U [REF:MIL-PRF-19500/564] 100V, P-CHANNEL Product Summary Part Number IRFE9130 BVDSS -100V RDS on 0.30Ω ID -6.5A The leadless chip carrier (LCC) package represents the

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

IRFE9110

Abstract: LCC-18
Contextual Info: PD - 91721C IRFE9110 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 100V, P-CHANNEL Product Summary Part Number IRFE9110 BVDSS -100V RDS(on) 1.2Ω ID -2.5A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface

JANTXV2N6798U

Abstract: LCC-18 IRFE9110 JANTX2N6798U dm 9936
Contextual Info: PD - 91721B IRFE9110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U  HEXFET TRANSISTORS JANTXV2N6798U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/557] 100V, P-CHANNEL Product Summary Part Number IRFE9110 BVDSS -100V RDS(on) 1.2Ω ID -2.5A The leadless chip carrier (LCC) package represents the

IRFE9130

Contextual Info: IRFE9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045)

Contextual Info: P-CHANNEL POWER MOSFET IRFE9130 • Hermetically Sealed, Light Weight, Small Footprint Surface Mount Package Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Screening Options Available • • • • ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated

IRFE9110

Contextual Info: PD - 9.1721A IRFE9110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL Ω , HEXFET -100Volt, 1.2Ω Product Summary The leadless chip carrier LCC package represents the logical next step in the continual evolution of surface mount technology. The LCC provides

Contextual Info: PD -93988 IRFE9120 JANTX2N6845U JANTXV2N6845U [REF:MIL-PRF-19500/563] 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE9120 BVDSS -100V RDS(on) ID 0.60Ω −3.5A The leadless chip carrier (LCC) package represents the

Contextual Info: PD - 91721C IRFE9110 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 100V, P-CHANNEL Product Summary Part Number IRFE9110 BVDSS -100V RDS(on) 1.2Ω ID -2.5A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface

IRFE9110

Contextual Info: IRFE9110 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045)

IRFE9130

Abstract: JANTX2N6849U JANTXV2N6849U LCC-18 65ADI
Contextual Info: PD - 91716B IRFE9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U [REF:MIL-PRF-19500/564] 100V, P-CHANNEL Product Summary Part Number IRFE9130 BVDSS -100V RDS on 0.30Ω ID -6.5A The leadless chip carrier (LCC) package represents the

Contextual Info: P-CHANNEL POWER MOSFET IRFE9130 • Hermetically Sealed, Light Weight, Small Footprint Surface Mount Package Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Screening Options Available • • • • ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated

diode A14A

Abstract: diode A14A surface mount A14A
Contextual Info: IRFE9110 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045)

irf P-Channel MOSFET audio

Abstract: 2N6849U 2N6849 JANS 2N6849 IRFE9130 JANS2N6849U JANTX2N6849U JANTXV2N6849U 2n6849 mosfet
Contextual Info: Provisional Data Sheet No. PD - 9.1716 IRFE9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:MIL-PRF-19500/564] Ω , HEXFET -100Volt, 0.30Ω The leadless chip carrier LCC package represents the logical next step in the continual evolution of

Contextual Info: lili Étti INI 5EME IRFE9130 LAB MECHANICAL DATA Dim ensions in mm inches P_PH A M M FI r —O r 1 A I \ l l \ l t l _ POWER MOSFET 9 .1 4 (0 .360) VDSS -100V -6.1 A 0.345Q ^D(cont) ^D S (on) FEATURES • SURFACE MOUNT • SMALL FOOTPRINT LCC4 • HERMETICALLY SEALED

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)