IRFE130 Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SHD248302 TECHNICAL DATA DATA SHEET 739, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.18 Ohm, 7.4A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRFE130 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

LCC-18

Abstract: MOSFET 50V 100A
Contextual Info: SENSITRON SEMICONDUCTOR SHD248302 TECHNICAL DATA DATA SHEET 739, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.18 Ohm, 7.4A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRFE130 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

2N6796U

Abstract: IRFE130 JANTXV2N6796U diode aa 90 JANTX2N6796U
Contextual Info: Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL Ω , HEXFET 100Volt, 0.18Ω Product Summary The leadless chip carrier LCC package represents

Contextual Info: SENSITRON SEMICONDUCTOR SHD230302 TECHNICAL DATA DATA SHEET 602, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.18 Ohm, 7.4A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRFE130 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: PD - 91666B IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U  HEXFET TRANSISTORS JANTXV2N6796U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/557] 100V, N-CHANNEL Product Summary Part Number IRFE130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A The leadless chip carrier (LCC) package represents the

Contextual Info: Provisional Data Sheet No. PD - 9.1666 International I R Rectifier IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL Product Summary 100Volt,0.18£2, HEXFET T h e leadless chip carrier LC C package represents

Contextual Info: IRFE130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 100V

DI 762

Abstract: IRFE130 SHD230302
Contextual Info: SENSITRON SEMICONDUCTOR SHD230302 TECHNICAL DATA DATA SHEET 602, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.18 Ohm, 7.4A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRFE130 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: Provisional Data Sheet No. PD - 9.1666 International IGR Rectifier IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Sum m ary 100Volt,0.18£l, HEXFET T h e lead less chip c a rrie r LC C p a cka g e re p re se n ts

IRFE130

Abstract: JANTX2N6796U JANTXV2N6796U LCC-18 4.5v to 100v input regulator
Contextual Info: PD - 91666B IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U  HEXFET TRANSISTORS JANTXV2N6796U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/557] 100V, N-CHANNEL Product Summary Part Number IRFE130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A The leadless chip carrier (LCC) package represents the

74a diode

Abstract: IRFE130
Contextual Info: IRFE130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 100V

Contextual Info: im SEM E IRFE130 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 9 .1 4 (0 .360) VDss 100V 7.44A 0.207Q ^D(cont) ^D S (on) FEATURES • SURFACE MOUNT • SMALL FOORPRINT • HERMETICALLY SEALED • DYNAMIC dv/dt RATING LCC4 • AVALANCHE ENERGY RATING

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

h20 smd

Contextual Info: International I« R Rectifier •o Part Number ¿2 Government and Space Products Tf=25°C W RDS on bVDSS (V) Tf=100°C (A) Pd @ T r= 2 5 °C (W) a Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC N-Channel IR F E 0 2 4 60

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRFJ140

Abstract: IRLF110
Contextual Info: Government/ Space Products International [1»1Rectifier Power MOSFETS High Reliability Logic Level — N-Channel V d s Drain Source Voltage Vblts Part Number IRLF110 IRLF120 IRLF130 100 RDS(on) On-State Resistance (Ohms) 0.60 0.35 0.20 Iq Continuous Drain Current

n10 smd

Contextual Info: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

Contextual Info: Provisional Data Sheet No. PD - 9.1666A International IOR Rectifier irfei3o JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D N -C H A N NE L Product Summary 100Volt, 0.18 ii, HEXFET