IRF341 Search Results

IRF341R

Abstract: IRF343 IRF340R IRF342R IRF343R
Contextual Info: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated

IRF34

Abstract: IRF3415 mosfet irf3415
Contextual Info: FOR REVIEW ONLY IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 95112 IRF3415S/LPbF • Lead-Free www.irf.com 1 3/16/04 IRF3415S/LPbF 2 www.irf.com IRF3415S/LPbF www.irf.com 3 IRF3415S/LPbF 4 www.irf.com IRF3415S/LPbF www.irf.com 5 IRF3415S/LPbF 6 www.irf.com IRF3415S/LPbF www.irf.com 7 IRF3415S/LPbF D2Pak Package Outline

IRL3103L

Contextual Info: PD - 95112 IRF3415S/LPbF • Lead-Free www.irf.com 1 3/16/04 IRF3415S/LPbF 2 www.irf.com IRF3415S/LPbF www.irf.com 3 IRF3415S/LPbF 4 www.irf.com IRF3415S/LPbF www.irf.com 5 IRF3415S/LPbF 6 www.irf.com IRF3415S/LPbF www.irf.com 7 IRF3415S/LPbF D2Pak Package Outline

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

irf7309

Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
Contextual Info: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S

IRF3415

Abstract: K 9008
Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

AM 22A

Abstract: 1477B IRF3415
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1477B IRF3415 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description

IRL3103L

Contextual Info: PD - 95112 IRF3415S/LPbF • Lead-Free www.irf.com 1 3/16/04 IRF3415S/LPbF 2 www.irf.com IRF3415S/LPbF www.irf.com 3 IRF3415S/LPbF 4 www.irf.com IRF3415S/LPbF www.irf.com 5 IRF3415S/LPbF 6 www.irf.com IRF3415S/LPbF www.irf.com 7 IRF3415S/LPbF D2Pak Package Outline

AN-994

Abstract: IRF3415 IRF3415L IRF3415S
Contextual Info: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A

IRF340

Abstract: IRF341 IRF342 IRF343 RC9S
Contextual Info: Standard Power MOSFETs- IRF340, IRF341, IRF342, IRF343 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8 A and 10 A, 350 V - 400 V rDscom = 0.55 O and 0.8 O

Contextual Info: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 95112 IRF3415S/LPbF • Lead-Free 1 IRF3415S/LPbF 2 IRF3415S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 8 0 24 AS S E M B L E D O N W W 0 2 , 2 0 0 0

RF1010

Abstract: diode body marking A 4
Contextual Info: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V

AN-994

Abstract: IRF3415
Contextual Info: IRF3415S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs

T0204AA

Contextual Info: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150

IRF3415

Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
Contextual Info: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

743 LEM

Abstract: IRF340 fairchild 741 741 LEM 8N40 fairchild 742 IRF341 IRF342 IRF343 AM/amplifier LEM 741
Contextual Info: A4 FAIRCHILD s e m i c o n d u c t o r dÊ J 34^74 DDETTDS 1 IRF340-343/IRF740-743 T - ì 1 MTM8N35/8N40 N-Channel Power M O SFET s, 10 A, 350 V/400 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description TO-204AA TO-220AB IRF340 IRF341

MARKING J9B

Contextual Info: PD- 9.1509B International I R Rectifier IRF3415S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description V d s s = 15 0 V

DIODE S4 83A

Abstract: irf340 DIODE M4A IRF34
Contextual Info: HE 0 I MflSS4S5 0 DOT 14 4 Q | Data Sheet No. PD-9.371F INTERNATIONAL R E C T I F I E R - Ì Y - f 3 INTERNATIONAL- RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* IRF340 IRF341 IRF342 IRF343 HEXFET TRANSISTORS 400 VOLT, 0.55 Ohm HEXFET TO-204AA TO-3 Hermetic Package

f1010

Abstract: IRF3415PBF
Contextual Info: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

AN-994

Abstract: IRF3415 IRF3415S IRF530S st ld 33 22A17
Contextual Info: Previous Datasheet Index Next Data Sheet PD- 9.1509A IRF3415S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 150V

IRF341

Contextual Info: iH A R R is SEMIC0NDUCT0R IRF340, IRF341 IRF342, IRF343 10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 10A and 8.3A, 400V and 350V • Linear Transfer Characteristics The IRF340, IRF341, IRF342, and IRF343 are N-Channel

Contextual Info: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier