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    IPB60R299CP Price and Stock

    Infineon Technologies AG IPB60R299CPATMA1

    MOSFET N-CH 600V 11A TO263-3
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    DigiKey IPB60R299CPATMA1 Reel
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    Rochester Electronics IPB60R299CPATMA1 180 1
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    TME IPB60R299CPATMA1 1
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    Infineon Technologies AG IPB60R299CPAATMA1

    MOSFET N-CH 600V 11A TO263-3
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    DigiKey IPB60R299CPAATMA1 Reel 1,000
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    IPB60R299CPAATMA1 Cut Tape 1
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    IPB60R299CPAATMA1 Digi-Reel 1
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    Verical IPB60R299CPAATMA1 3,917 194
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    IPB60R299CPAATMA1 1,000 9
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    Newark IPB60R299CPAATMA1 Cut Tape 1
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    Rochester Electronics IPB60R299CPAATMA1 3,917 1
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    Chip1Stop IPB60R299CPAATMA1 Cut Tape 1,000
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    Infineon Technologies AG IPB60R299CPA

    11A, 600V, 0.299OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB
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    Quest Components IPB60R299CPA 1,600
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    Infineon Technologies AG IPB60R299CP

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    Chip-Germany GmbH IPB60R299CP 44
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    IPB60R299CP Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB60R299CP Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 299.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 34.0 A; Original PDF
    IPB60R299CPAATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO263-3 Original PDF
    IPB60R299CPATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-263 Original PDF

    IPB60R299CP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6R299A

    Abstract: 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS on ,max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPB60R299CPA PG-TO263-3 6R299A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6R299A 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA

    Diode SMD ED 98

    Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS 0.299 Ω R DS on ,max 22 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPB60R299CPA 6R299A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 Diode SMD ED 98 diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor

    6R299P

    Abstract: 6r299 6R29 IPB60R299CP JESD22 SMD TRANSISTOR MARKING Dd
    Text: IPB60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R299CP PG-TO263 6R299P 6R299P 6r299 6R29 IPB60R299CP JESD22 SMD TRANSISTOR MARKING Dd

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    mosfet 6R199

    Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    PG-TO262-3-1

    Abstract: 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPI60R099CPA PG-TO262-3-1 6R099A PG-TO263-3-2 PG-TO220-3-1 PG-TO247-3-41 PG-TO262-3-1 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    6r099a

    Abstract: 6r099 DIODE ED 11
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability


    Original     		PDF IPW60R099CPA 6R099A PG-TO247-3 PG-TO247-3 IPW60PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 DIODE ED 11

    6r099

    Abstract: df RN transistor
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Features ed nd me ns om sig ec de tr w e no rn fo Q g,typ 600 V 0.105 Ω 60 nC • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPP60R099CPA 6R099A PG-TO220-3-1 PG-TO220-3-1 APG-TO263-3-2 PG-TO262-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 df RN transistor

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    IPW60R099CPA

    Abstract: PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPW60R099CPA PG-TO247-3 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 IPW60R099CPA PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3

    IPP60R099CPA

    Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPP60R099CPA PG-TO220-3-1 6R099A PG-TO262-3-1 PG-TO247-3-41 IPP60R099CPA IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    6r045a

    Abstract: IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247
    Text: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPW60R045CPA PG-TO247-3 6R045A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6r045a IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247

    ipb60r099cpa

    Abstract: IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPI60R099CPA PG-TO262-3-1 6R099A PG-TO220-3-1 PG-TO247-3-41 ipb60r099cpa IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1

    Diode SMD ED 98

    Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me

    sd 431 transistor

    Abstract: 6R045A 6r045 ED-44 diode
    Text: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.045 Ω 150 nC • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPW60R045CPA 6R045A PG-TO247-3 PG-TO247-3 IPW60PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 sd 431 transistor 6r045 ED-44 diode

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF

    PG-TO263-3-2

    Abstract: PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO263-3-2 PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199

    PG-TO247

    Abstract: ipw60r075cpa IPB60R099CPA IPB60R199CPA IPI60R099CPA
    Text: IPW60R075CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.075 Ω 87 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPW60R075CPA PG-TO247-3 6R075PA PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247 ipw60r075cpa IPB60R099CPA IPB60R199CPA IPI60R099CPA

    DIODE ED 99

    Abstract: mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS 0.199 Ω R DS on ,max 33 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability


    Original     		PDF IPB60R199CPA 6R199A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 DIODE ED 99 mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC