IBM11D2360Q Search Results
IBM11D2360Q Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IBM11D2360QC-60 |
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DRAM Board | Original | |||
IBM11D2360QC-70 |
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DRAM Board | Original | |||
IBM11D2360QD-60J |
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DRAM Board | Original | |||
IBM11D2360QD-70J |
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DRAM Board | Original |
IBM11D2360Q Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IBM11 D1360Q IBM11 E1360Q 1 M/2M X IBM11D2360Q IBM11 E2360Q 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 : -70 *RAC ; R A S A c c e s s T im e 60 ns tcAc C A S A c c e s s T im e 15ns : 20ns • Single 5V, + 0.5V Power Supply |
OCR Scan |
IBM11 D1360Q E1360Q 72-Pin IBM11D2360Q E2360Q 110ns | |
Contextual Info: IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address |
OCR Scan |
IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 72-Pin 110ns 130ns | |
Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS compatible • Low active current dissipation |
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IBM11D2360ED2M QC10/10, IBM11E2360ED2M IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q 72-Pin | |
1829pfContextual Info: IBM11D1360Q1M 10/10, 5.0V, Sn/PbMMDS25DSU-001023221. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M x 36 QC10/10, IBM11E2360Q2M 5.0V, Au MMDS25DSU-001023221. x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221. IBM11D2360Q2M x 36 QC IBM11D1360Q IBM11D2360Q |
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Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M QC10/10, MMDS25DSU-001023221. IBM11D1360Q1M IBM11E2360Q2M 1829pf | |
64mb edo dram simm
Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
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Contextual Info: IB M 1 1 D 1 3 6 0 Q IB M 1 1 E 1 3 6 0 Q IB M 1 1 D 2 3 6 0 Q IB M 1 1 E 2 3 6 0 Q 1M/2M x 36 DRAM Module Features All inputs & outputs are fully TTL & CMOS compatible Low active current dissipation Fast Page Mode access cycle Refresh Modes: RAS-Only, CBR, and Hidden |
OCR Scan |
72-Pin 110nsd IBM11D2360Q IBM11E2360Q IBM11D1360Q IBM11E1360Q 26H2703 26H2704) | |
2m x 32 SRAM SIMM
Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
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IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B 2m x 32 SRAM SIMM IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168 |