RAD HARD TRENCH TRANSISTOR
Abstract: No abstract text available
Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER
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OCR Scan
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1x101
PIN23
HX6464/1
HX6464/2
HX6464/3
RAD HARD TRENCH TRANSISTOR
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PDF
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1x10
Abstract: MN55441 HC6364
Text: Kcmeywell HONEYÙJELL/S S E C 3ÖE D 4551Ô72 DOüGSSb ñ B 3 H 0 N 3 - Military Products Advance Information HX6464 64K x 1 RADIATION-HARDENED STATIC RAM - SOI -OS FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator
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OCR Scan
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1x107
1x101
10Upsets/Cell-Day
1x1013rad
1x10
MN55441
HC6364
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PDF
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x-ray cmos
Abstract: No abstract text available
Text: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator
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OCR Scan
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1x10s
1x101
PIN23
HX6464/1
HX6464/2
HX6464/3
x-ray cmos
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PDF
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DELL pa- 19 power supply diagram
Abstract: dell axim
Text: b3E D • MSS1Ô7S D Ü OOT S G T DD ■H0N 3 H O V ie y W e ll 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator SOI 1.2|.im process • Access Time of 20 ns (typical) s 40 ns worst case (0 to 80 °C)
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OCR Scan
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1x101
P1N23
DELL pa- 19 power supply diagram
dell axim
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PDF
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