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    HUF75329 Search Results

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    HUF75329 Price and Stock

    onsemi HUF75329D3ST

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75329D3ST Cut Tape 2,483 1
    • 1 $1.28
    • 10 $0.862
    • 100 $1.28
    • 1000 $0.44758
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    HUF75329D3ST Digi-Reel 2,483 1
    • 1 $1.28
    • 10 $0.862
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    • 1000 $0.44758
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    HUF75329D3ST Reel 2,500
    • 1 -
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    • 10000 $0.404
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    Avnet Americas HUF75329D3ST Reel 16 Weeks 2,500
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    • 10000 $0.38476
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    Mouser Electronics HUF75329D3ST 4,582
    • 1 $0.93
    • 10 $0.741
    • 100 $0.602
    • 1000 $0.448
    • 10000 $0.404
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    Newark HUF75329D3ST Cut Tape 2,500
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    HUF75329D3ST Reel 2,500
    • 1 $0.556
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    • 1000 $0.556
    • 10000 $0.485
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    Onlinecomponents.com HUF75329D3ST
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    Bristol Electronics HUF75329D3ST 38
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    Rochester Electronics HUF75329D3ST 208 1
    • 1 $0.4489
    • 10 $0.4489
    • 100 $0.422
    • 1000 $0.3816
    • 10000 $0.3816
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    Richardson RFPD HUF75329D3ST 2,500
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    Avnet Silica HUF75329D3ST 15,000 17 Weeks 2,500
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    EBV Elektronik HUF75329D3ST 18 Weeks 2,500
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    New Advantage Corporation HUF75329D3ST 12,500 1
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    Rochester Electronics LLC HUF75329P3

    MOSFET N-CH 55V 49A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75329P3 Tube 468
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    onsemi HUF75329P3

    MOSFET N-CH 55V 49A TO220-3
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    DigiKey HUF75329P3 Tube
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    Rochester Electronics LLC HUF75329D3

    MOSFET N-CH 55V 20A IPAK
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    DigiKey HUF75329D3 Tube 452
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    • 1000 $0.66
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    onsemi HUF75329G3

    MOSFET N-CH 55V 49A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75329G3 Tube 150
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    • 1000 $0.85987
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    HUF75329 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75329D3 Fairchild Semiconductor 20A, 55V, 0.026 ?, N-Channel UltraFET Power MOSF Original PDF
    HUF75329D3 Intersil 20A, 55V, 0.026 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329D3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75329D3S Fairchild Semiconductor 20A, 55V, 0.026 ?, N-Channel UltraFET Power MOSF Original PDF
    HUF75329D3S Fairchild Semiconductor 20A, 55V, 0.026 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329D3S Intersil 20A, 55V, 0.026 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329D3S_NL Fairchild Semiconductor 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329D3ST Fairchild Semiconductor 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75329D3ST Fairchild Semiconductor 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75329D3ST_NL Fairchild Semiconductor 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329G3 Fairchild Semiconductor 49 A, 55 V, 0.024 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75329G3 Harris Semiconductor 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75329G3 Intersil 49A, 55V, 0.024 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329G3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75329G3 Intersil 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Scan PDF
    HUF75329P3 Fairchild Semiconductor 49 A, 55 V, 0.024 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75329P3 Fairchild Semiconductor 49A, 55V, 0.024 ?R N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329P3 Harris Semiconductor 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75329P3 Intersil 49A, 55V, 0.024 ?, N-Channel UltraFET Power MOSFETs Original PDF

    HUF75329 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    75329G

    Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329G 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334

    75329p

    Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original
    PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original
    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ Features • 20A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original
    PDF HUF75329D3S HUF75329D3S

    75329P

    Abstract: 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286
    Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 42A, 55V The HUF75329 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original
    PDF HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HUF75329 1-800-4-HARRIS 75329P 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286

    75329P

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 42A, 55V • Ultra Low On-Resistance, rDS ON = 0.025Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original
    PDF HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329P 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334

    75329D

    Abstract: HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75329D3, HUF75329D3S 71e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2 75329D HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334

    75329p

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334

    75329D

    Abstract: AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75329D3, HUF75329D3S 75329D AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original
    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original
    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original
    PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    HUF75307D

    Abstract: No abstract text available
    Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology


    Original
    PDF 5V/75A/0 OT-223 O-251AA/252AA O-220AB HUF75345P3 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 O-262AA/263AB HUF75307D

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    75329p

    Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS
    Text: interrii HUF75329G3, HUF75329P3, HUF75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS

    75329p

    Abstract: 75329G HUF75329G3
    Text: in t e is il HUF75329G3, HUF75329P3, HUF75329S3S D a ta S h e e t J a n u a ry 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan
    PDF HUF75329G3, HUF75329P3, HUF75329S3S HUF7S329P3, HUF7S329S3S AN7254 AN7260. 75329p 75329G HUF75329G3

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75329D3, HUF75329D3S 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75329D3, HUF75329D3S 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3

    75329s

    Abstract: HUF75329P3 19407
    Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    PDF HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329s HUF75329P3 19407

    75329d

    Abstract: TA75329 HUF75329D3
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75329D3, HUF75329D3S TA7532HERM2 98e-2 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 75329d TA75329 HUF75329D3

    75329d

    Abstract: No abstract text available
    Text: intelai I HUF75329D3, HUF75329D3S Data S heet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75329D3, HUF75329D3S AN7254 AN7260. 75329d