GQM2195C2E5R6BB12 Search Results
GQM2195C2E5R6BB12 Price and Stock
Murata Manufacturing Co Ltd GQM2195C2E5R6BB12DCAP CER 5.6PF 250V NP0 0805 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GQM2195C2E5R6BB12D | Cut Tape | 1,203 | 1 |
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GQM2195C2E5R6BB12D | Reel | 10 Weeks | 4,000 |
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GQM2195C2E5R6BB12D | 6,270 |
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GQM2195C2E5R6BB12D | Reel | 4,000 |
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GQM2195C2E5R6BB12D | 4,000 |
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GQM2195C2E5R6BB12D | Reel | 11 Weeks | 4,000 |
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GQM2195C2E5R6BB12D | 8 Weeks | 4,000 |
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Murata Manufacturing Co Ltd GQM2195C2E5R6BB12JCAP CER 5.6PF 250V NP0 0805 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GQM2195C2E5R6BB12J | Reel | 10,000 |
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GQM2195C2E5R6BB12J | Reel | 10 Weeks | 10,000 |
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GQM2195C2E5R6BB12J |
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GQM2195C2E5R6BB12 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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GQM2195C2E5R6BB12D | muRata | Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0805 | Original | |||
GQM2195C2E5R6BB12J | muRata | Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0805 | Original |
GQM2195C2E5R6BB12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: RF HIGH FREQUENCY CHIP MONOLITHIC CERAMIC CAPACITOR GQM2195C2E5R6BB12_ 0805, C0G, 5.6pF, 250Vdc _: packaging code Reference Sheet 1.Scope This product specification is applied to RF High Frequency Chip Monolithic Ceramic Capacitor used for RF High frequency |
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GQM2195C2E5R6BB12_ 250Vdc) JEMCNC-0012L | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136 |
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AFT09MS015N AFT09MS015NT1 | |
MXHP32HP
Abstract: MXHP32HP1000 LQM18FN2R2M00 1uF 250V 10 X7R SMD electrolytic BNX024H01 LQM18FN100M00 GRM1555C1HR50BA01 NCP18XH103J03RB GRM1555C1H390JA0 PRF18BA471QS5RB
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G-06-G MXHP32HP MXHP32HP1000 LQM18FN2R2M00 1uF 250V 10 X7R SMD electrolytic BNX024H01 LQM18FN100M00 GRM1555C1HR50BA01 NCP18XH103J03RB GRM1555C1H390JA0 PRF18BA471QS5RB | |
Y5V50
Abstract: GRM0225C1CR80BD05 GRM43ER61C226KE01 GRM0225C1CR20BD05 GRM033R60G224ME15 GRM31C5C1E104J GRM32ER71A476 GRM55FR60J107KA01 GRM0225C1C1R0CD05 GRM0225C1C1R1CD05
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GRM0225C1CR20BD05 GRM0225C1CR30BD05 GRM0225C1CR40BD05 GRM0225C1CR50BD05 GRM0225C1CR60BD05 GRM0225C1CR70BD05 GRM0225C1CR75BD05 GRM0225C1CR80BD05 GRM0225C1CR90BD05 GRM0225C1C1R0CD05 Y5V50 GRM0225C1CR80BD05 GRM43ER61C226KE01 GRM0225C1CR20BD05 GRM033R60G224ME15 GRM31C5C1E104J GRM32ER71A476 GRM55FR60J107KA01 GRM0225C1C1R0CD05 GRM0225C1C1R1CD05 | |
A9M15
Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
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AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor | |
A5M06
Abstract: Transistor Z17
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AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17 | |
GRM188R71H224KAC4
Abstract: GJM1555C1HR75BB01 GRM55FR60J107KA01 GCM31MR71H474K GQM1875C2E3R6BB12 GRM0225C1CR80BD05 GRM022R60J222KE19 GRM033R60G224ME15 grm1555c1h3r3cz01 GRM2165C1H681
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GRM0225C1CR20BD05 GRM0225C1CR30BD05 GRM0225C1CR40BD05 GRM0225C1CR50BD05 GRM0225C1CR60BD05 GRM0225C1CR70BD05 GRM0225C1CR75BD05 GRM0225C1CR80BD05 GRM0225C1CR90BD05 GRM0225C1C1R0CD05 GRM188R71H224KAC4 GJM1555C1HR75BB01 GRM55FR60J107KA01 GCM31MR71H474K GQM1875C2E3R6BB12 GRM0225C1CR80BD05 GRM022R60J222KE19 GRM033R60G224ME15 grm1555c1h3r3cz01 GRM2165C1H681 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136 |
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AFT09MS015N AFT09MS015NT1 | |
A5M0
Abstract: IC 2 5/A5M06
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AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06 | |
GQM22
Abstract: GQM2195C2A2R7BB01D GQM1885C2AR70CB01 GQM1885C2A1R5CB01 GQM22M GQM1885C1H101JB01 GQM187 GQM1875C2E120GB12D GQM1875C2E100JB12 GQM1885C2A1R0BB01D
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500MHz 10GHz. 500VDC. 100pF, 500VDC 1C2H3R0BB01L GQM22M5C2H3R3BB01L GQM22M5C2H3R6BB01L GQM22M5C2H3R9BB01L GQM22M5C2H4R3BB01L GQM22 GQM2195C2A2R7BB01D GQM1885C2AR70CB01 GQM1885C2A1R5CB01 GQM22M GQM1885C1H101JB01 GQM187 GQM1875C2E120GB12D GQM1875C2E100JB12 GQM1885C2A1R0BB01D | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136 |
Original |
AFT09MS015N AFT09MS015NT1 |