GP500LSS06S Search Results

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S DS4324-3.1 GP500LSS06S p o w e r l in e n -c h a n n e l ig b t m o d u l e TYPICAL KEY PARAMETERS VCES 600V VCE ial 2.1V W ond 500A APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

Contextual Info: M ITEL GP500LSS06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1998 version, DS4324 - 4.3 The G P 500LS S 06S is a single sw itch 600V, robust n c h a n n e l e n h a n c e m e n t m od e in s u la te d g a te b ip o la r tran sistor IGBT . Designed fo r low p ow er loss, the m odule

GP500LSS06S

Abstract: transistor 600v 500a A50B
Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces July 2002 version, DS4324-7.1 FEATURES FDS4324-8.0 July 2003 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop Isolated Base IC25 (max) 700A

GP500LSS06S

Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces January 2000 version, DS4324-5.0 FEATURES DS4324-6.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) ■ Low Forward Voltage Drop (max) 700A Isolated Base IC25

ge traction motor

Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

Contextual Info: JULY 1996 GP500LSS06S ADVANCE ENGINEERING DATA DS4324-3.1 GP500LSS06S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 600V VCES 2.1V VCE sat 500A IC(CONT) 1000A IC(PK) 290ns tr 430ns tf • High Power Switching. ■ Motor Control. ■ UPS.

GP500LSS06S

Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces October 2001 version, DS4324-6.0 FEATURES DS4324-7.0 April 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 700A Isolated Base IC25

GP500LSS06S

Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces April 2002 version, DS4324-7.0 FEATURES DS4324-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 700A Isolated Base IC25

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

MP02X

Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Contextual Info: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW

108X62

Contextual Info: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV)