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    AMD XC5VFX130T-2FFG1738C

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    G1738 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G1738 Hamamatsu Photonics GaAsP photodiode Original PDF

    G1738 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G1735

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. G1735 G1736 G1737 G1738


    Original     		G1735 G1736 G1737 G1738 G1740 G3297 KGPD1003E02 PDF

    G1736

    Abstract: G1735 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsPフォトダイオード 拡散型 赤感度延長タイプ 特長 用途 l 低暗電流 l 高安定性 l 赤感度延長タイプ l 分析機器 l 色識別 • 一般定格／絶対最大定格 型名 G1735 G1736 G1737 G1738 G1740 G3297 外形


    Original     		G1735 G1736 G1737 G1738 G1740 G3297 G1736 G1735 G1737 G1738 G1740 G3297 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Type No. Dim ensional Outline (P.44-50)/ W indow Material Package Active Area Size Effective Active Area - (mm). (mm2) Spectral Response Range A (nm) Photo Sensitivity S Typ. (A/W ) , Peak Sensitivity Wavelength Ap : (nm)


    OCR Scan     		G1116 G1117 G1120 G1737 KGPDB0004EA G1118, G3067, G1735, G1738j KSPDB0007EA PDF

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863 PDF

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133 PDF

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118 PDF

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original     		G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)


    OCR Scan     		Isc100 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G5645 G5842 PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: .070 MULTILOCK Connectors Wire to Board Applications / Horizontal Mount Type Plug Mark I/M ark 11} Cap L 20 Part Number : □-175785- Pos. Mark I Part Number : 174952- Mark II Part Number : 176119-G (2.0 ' — 15 0 45. 9- - ^ j il il 0fl iHt .11L 16 S —


    OCR Scan     		176119-G G-173864-G 14pos. 173852-G 176117-G 174465-G 176114-G 10pos. PDF

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01 PDF

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533 PDF

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532 PDF

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407 PDF

    S3884

    Abstract: G1116
    Text: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc


    OCR Scan     		31-V0I5' G1115 G1116 G1120 G3067 G2711-01 G1735 G1736 Gf737 G1738 S3884 PDF

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: TH 1S DRAW 1NG IS UNPUBL 1SHED. 4 RELEASED FOR PUBLICATION BY TYCO ELECTRON ICS CORPORATION COPYR1GHT 20 20 LOC ALL RIGHTS RESERVED. DF D I ST A5 R E V I S I O N S P LTR C 13 5 8 . 0 o c r> O m l O CM o DESCR1P T 1ON DATE R E V I S E D PER E C O - 0 8 - 0 2 9 6 7 9


    OCR Scan     		23DEC2008 9MAY2004 M38999 PDF

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01 PDF

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original     		G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735 PDF

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


    OCR Scan     		42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01 PDF

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


    OCR Scan     		Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ PDF

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


    OCR Scan     		100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015 PDF

    Hamamatsu G1735

    Abstract: G1735
    Text: GaAsP photodiodes Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. Dimensional outline/


    Original     		G1735 G1736 G1737 G1738 G1740 KGPD1003E03 Hamamatsu G1735 PDF