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    FSJ9160R Search Results

    FSJ9160R Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSJ9160R Intersil 44A, -100V, 0.055 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9160R1 Fairchild Semiconductor 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSJ9160R1 Intersil 44A, -100V, 0.055 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9160R3 Fairchild Semiconductor 44A, -100V, 0.055 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9160R3 Intersil 44A, -100V, 0.055 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9160R4 Fairchild Semiconductor 44A, -100V, 0.055 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSJ9160R4 Intersil 44A, -100V, 0.055 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSJ9160R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2E12

    Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET
    Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSJ9160D, FSJ9160R -100V, 2E12 FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ9160D, FSJ9160R -100V, Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1
    Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSJ9160D, FSJ9160R -100V, 2E12 FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R FSJ9160D, FSJ9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ9160D, FSJ9160R 1-800-4-HARRIS

    VOLTAGE LEVEL RELAY SM 125 230

    Abstract: No abstract text available
    Text: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ9160D, FSJ9160R -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; VOLTAGE LEVEL RELAY SM 125 230

    Untitled

    Abstract: No abstract text available
    Text: ¡as H a rris FSJ9160D, FSJ9160R S E M I C O N D U C T O R " U W U W 'W * Radiation Hardened, S E G R Resistant P-Channel Power M O S F E T s February 1998 Features Description • 44A, -100V, r D S o N = 0.055i2 The Discrete Products Operation of Harris Semiconductor


    OCR Scan     		PDF FSJ9160D, FSJ9160R -100V, 055i2 36MeV/m 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rQs^oN = 0.055i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ9160D, FSJ9160R -100V, MIL-S-19500

    Power MOSFET Selection Guide

    Abstract: TO-205AF Package
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R Power MOSFET Selection Guide TO-205AF Package

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264