FSF9150R4 Search Results

Contextual Info: JANSR2N7403 S E M I C O N D U C T O R Formerly Available As FSF9150R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs February 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Harris Semiconductor

TO-254AA Package

Abstract: FSF9150R4
Contextual Info: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

FSF9150R4

Abstract: p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 03 /Subject (22A, 100V, 0.140 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 22A, 100V,

Contextual Info: JANSR2N7403 h a r r is S E M I C O N D U C T O R * mm w m m ^ m m m m m v W ' Formerly Available As FSF9150R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs February 1998 Features Description • 22A, -100V, rDS oN = 0-140i2 The Discrete Products Operation of Harris Semiconductor

Contextual Info: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

FSF9150R4

Abstract: 2E12 JANSR2N7403
Contextual Info: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

FSF9150R1

Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

7404

Contextual Info: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F

Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 22A, -100V, rDS 0 N = 0.140£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

7n51

Contextual Info: FSF9150D, FSF9150R HARRIS S E M I C O N D U C T O R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 22A, -100V, rDS 0N = 0.140Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r

2E12

Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event