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    FQU13N10 Search Results

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    FQU13N10 Price and Stock

    onsemi FQU13N10TU

    MOSFET N-CH 100V 10A IPAK
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    DigiKey FQU13N10TU Tube 5,040
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    onsemi FQU13N10LTU

    MOSFET N-CH 100V 10A IPAK
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    DigiKey FQU13N10LTU Tube
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    Avnet Silica FQU13N10LTU 143 Weeks 70
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    EBV Elektronik FQU13N10LTU 143 Weeks 70
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    Flip Electronics FQU13N10LTU 5,040
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    Fairchild Semiconductor Corporation FQU13N10LTU

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    Bristol Electronics FQU13N10LTU 630
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    Quest Components FQU13N10LTU 504
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    ComSIT USA FQU13N10LTU 3,430
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    Lite-On Semiconductor Corporation FQU13N10L

    POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251
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    Quest Components FQU13N10L 59
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    onsemi FQU13N10L

    POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FQU13N10L 48
    • 1 $0.9
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    • 100 $0.54
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    FQU13N10 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQU13N10 Fairchild Semiconductor 100 V N-Channel MOSFET Original PDF
    FQU13N10L Fairchild Semiconductor 100 V Logic N-Channel MOSFET Original PDF
    FQU13N10LTU Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQU13N10TU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A IPAK Original PDF
    FQU13N10TU Fairchild Semiconductor 100V N-Channel QFET Original PDF

    FQU13N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10 / FQU13N10 May 2000 QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQD13N10TF FQD13N10TM O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A


    Original     		FQD13N10L FQU13N10L PDF

    FQD13N10

    Abstract: FQU13N10
    Text: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10L FQU13N10L PDF

    FQU13N10L

    Abstract: FQD13N10L
    Text: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQU13N10L PDF

    FQD13N10

    Abstract: FQU13N10
    Text: QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQU13N10L FQU13N10LTU O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQU13N10 FQU13N10TU O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD13N10L FQU13N10L PDF

    fqd13n10l

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10L FQU13N10L FQU13N10L PDF

    FQD13N10

    Abstract: No abstract text available
    Text: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10 FQU13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10L FQU13N10L PDF

    FQD13N10L

    Abstract: FQU13N10L
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQU13N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L May 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD13N10L FQU13N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQD13N10LTF FQD13N10LTM O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10 FQU13N10 FQU13N10 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031


    Original     		O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL PDF