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    FQD13N10 Price and Stock

    onsemi FQD13N10TM

    Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N10TM)
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    Avnet Americas FQD13N10TM Reel 7 Weeks 2,500
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    Mouser Electronics FQD13N10TM 8,283
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    Verical FQD13N10TM 80,000 2,500
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    Newark FQD13N10TM Reel 2,500
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    Onlinecomponents.com FQD13N10TM
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    Bristol Electronics FQD13N10TM 3,561
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    Richardson RFPD FQD13N10TM 2,500
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    onsemi FQD13N10LTM

    Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N10LTM)
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    Avnet Americas FQD13N10LTM Reel 5,000
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    FQD13N10LTM Reel 6 Weeks 5,000
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    Mouser Electronics FQD13N10LTM 251,293
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    Verical FQD13N10LTM 55,000 2,500
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    FQD13N10LTM 25,000 2,500
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    FQD13N10LTM 77 24
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    Arrow Electronics FQD13N10LTM 55,000 6 Weeks 2,500
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    FQD13N10LTM 25,000 6 Weeks 2,500
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    FQD13N10LTM Cut Strips 77 6 Weeks 1
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    Newark FQD13N10LTM Cut Tape 9,266 5
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    FQD13N10LTM Reel 2,500
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    Onlinecomponents.com FQD13N10LTM 5,000
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    TME FQD13N10LTM 1
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    Richardson RFPD FQD13N10LTM 5,000
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    Avnet Asia FQD13N10LTM 6 Weeks 5,000
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    Avnet Silica FQD13N10LTM 7 Weeks 2,500
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    Chip One Stop FQD13N10LTM Cut Tape 1,955 0 Weeks, 1 Days 5
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    New Advantage Corporation FQD13N10LTM 540,000 1
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    Fairchild Semiconductor Corporation FQD13N10LTM

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    Bristol Electronics FQD13N10LTM 506
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    FQD13N10LTM 421
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    Quest Components FQD13N10LTM 404
    • 1 $0.8625
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    FQD13N10LTM 336
    • 1 $5.55
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    ComSIT USA FQD13N10LTM 2,024
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    Vyrian FQD13N10LTM 36,249
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    Win Source Electronics FQD13N10LTM 15,000
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    Fairchild Semiconductor Corporation FQD13N10LTMNL

    Electronic Component
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    ComSIT USA FQD13N10LTMNL 18
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    Win Source Electronics FQD13N10LTMNL 13,780
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    Fairchild Semiconductor Corporation FQD13N10LTM_NBEL001

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    Vyrian FQD13N10LTM_NBEL001 1,139
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    Find more FQD13N10 price and stock on Findchips.com

    FQD13N10 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD13N10 Fairchild Semiconductor 100V N-Channel MOSFET Original PDF
    FQD13N10L Fairchild Semiconductor 100 V Logic N-Channel MOSFET Original PDF
    FQD13N10LTF Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQD13N10LTM Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQD13N10LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF
    FQD13N10LTM_NBEL001 Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQD13N10TF Fairchild Semiconductor 100V N-Channel QFET Original PDF
    FQD13N10TF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF
    FQD13N10TM Fairchild Semiconductor 100V N-Channel QFET Original PDF
    FQD13N10TM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF

    FQD13N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10 / FQU13N10 May 2000 QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQD13N10TF FQD13N10TM O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A


    Original     		FQD13N10L FQU13N10L PDF

    FQD13N10

    Abstract: FQU13N10
    Text: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10L FQU13N10L PDF

    FQU13N10L

    Abstract: FQD13N10L
    Text: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQU13N10L PDF

    FQD13N10

    Abstract: FQU13N10
    Text: QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQU13N10L FQU13N10LTU O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 FQU13N10 FQU13N10TU O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD13N10 FQU13N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD13N10L FQU13N10L PDF

    fqd13n10l

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10L FQU13N10L FQU13N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10L FQU13N10L PDF

    FQD13N10L

    Abstract: FQU13N10L
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQU13N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L May 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD13N10L FQU13N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQD13N10L FQU13N10L FQD13N10LTF FQD13N10LTM O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQD13N10 FQU13N10 FQU13N10 PDF

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF