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    FQB25N33TM Search Results

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    FQB25N33TM Price and Stock

    Rochester Electronics LLC FQB25N33TM

    MOSFET N-CH 330V 25A D2PAK
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    DigiKey FQB25N33TM Bulk 17,500 213
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    Rochester Electronics LLC FQB25N33TM-F085

    MOSFET N-CH 330V 25A D2PAK
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    DigiKey FQB25N33TM-F085 Bulk 8,000 168
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    Rochester Electronics LLC FQB25N33TM-F085OSCT

    Power Field-Effect Transistor, 2
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    DigiKey FQB25N33TM-F085OSCT Bulk 336 168
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    onsemi FQB25N33TM

    MOSFET N-CH 330V 25A D2PAK
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    DigiKey FQB25N33TM Reel
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    Avnet Americas FQB25N33TM Reel 111 Weeks 800
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    onsemi FQB25N33TM-F085

    MOSFET N-CH 330V 25A D2PAK
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    DigiKey () FQB25N33TM-F085 Cut Tape
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    FQB25N33TM-F085 Digi-Reel 1
    • 1 $3.52
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    FQB25N33TM-F085 Reel
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    Avnet Americas FQB25N33TM-F085 Reel 0 Weeks, 2 Days 443
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    Quest Components FQB25N33TM-F085 4
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    Flip Electronics FQB25N33TM-F085 50,400
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    FQB25N33TM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB25N33TM
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 330V 25A D2PAK Original PDF
    FQB25N33TM_F085
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 330V 25A D2PAK Original PDF
    FQB25N33TM-F085
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 330V 25A D2PAK Original PDF

    FQB25N33TM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQB25N33TM_F085 330V N-Channel MOSFET tm Features General Description • 25A, 330V, RDS on = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB25N33TM PDF

    Contextual Info: FQB25N33TM_F085 330V N-Channel MOSFET tm Features General Description • 25A, 330V, RDS on = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB25N33TM PDF

    FQB25N33

    Abstract: FQB25N33TM-F085
    Contextual Info: FQB25N33TM_F085 330V N-Channel MOSFET tm Features General Description • 25A, 330V, RDS on = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB25N33TM FQB25N33 FQB25N33TM-F085 PDF

    diode marking 226

    Abstract: .25N33 25n33
    Contextual Info: QFET FQB25N33 330V N-Channel MOSFET Features General Description • 25A, 330V, RDS on = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58nC)


    Original     		FQB25N33 FQB25N33TM diode marking 226 .25N33 25n33 PDF

    IGBT DRIVER ignition coil automotive

    Abstract: SCHEMATIC IGNITION WITH IGBTS single phase ac motor speed control with triac HUFA76419D inverter 12v to 220 ac mosfet based
    Contextual Info: AUTOMOTIVE SOLUTIONS Power Semiconductors Maximize Efficiency and Reliability INTRODUCTION Automotive Electronic Designers need suppliers who Fairchild also offers a variety of automotive products in understand their business. With a comprehensive approach


    Original     		PDF