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Text: FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 mΩ Features Typical RDS on = 2.0 mΩ at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G RoHS Compliant TO-263 FDB SERIES Qualified to AEC Q101