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Royal Electronic Factory (Thailand) Co Ltd MF0W4FF2430A10 Metal Film Resistors - Through Hole 250 mW (1/4 W) 1% 243R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MF0W4FF2430A10					1 - 10 - 100 - 1000 $0.014 10000 $0.01	Get Quote
Royal Electronic Factory (Thailand) Co Ltd MF0W8FF2430A20 Metal Film Resistors - Through Hole 125 mW (1/8 W) 1% 243R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MF0W8FF2430A20					1 - 10 - 100 - 1000 - 10000 $0.007	Get Quote
Royal Electronic Factory (Thailand) Co Ltd MF006FF2430A50 Resistor: metal film; THT; 243Ω; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.8mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MF006FF2430A50				5,000	1 - 10 - 100 - 1000 - 10000 $0.0076	Get Quote
Royal Electronic Factory (Thailand) Co Ltd MFF04FF2430A50 Resistor: metal film; THT; 243Ω; 250mW; ±1%; Ø1.9x3.7mm; axial
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MFF04FF2430A50				5,000	1 - 10 - 100 - 1000 - 10000 $0.0065	Get Quote
Royal Electronic Factory (Thailand) Co Ltd MF0W4FF2430A50 Resistor: metal film; THT; 243Ω; 250mW; ±1%; Ø2.5x6.8mm; axial
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MF0W4FF2430A50				5,000	1 - 10 - 100 - 1000 - 10000 $0.0073	Get Quote

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F2430A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGF2430A Abstract: 2430A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ¡ M G F2430A j MICROWAVE POW ER GaAs F ET DESCRIPTION The M G F2430A , po w er G aA s FET w ith an N -channel sch o ttk y gate, is designed fo r use in S to Ku band a m p li fiers. FEATURES • H igh o u tp u t po w er	OCR Scan	PDF	F2430A F2430A 300mA) MGF2430A 2430A
MGF2430A Abstract: MGF2430 fet J 305 ku Band Power GaAs FET Gf-17 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2430A MICROWAVE POWER GaAs FET DESCRIPTION T he M G F 2 4 3 0 A , power GaAs F E T w ith an N-channel scho ttky gate, is designed fo r use in S to Ku band a m p li fiers. FEATURES • High o u tp u t power • High pow er gain	OCR Scan	PDF	MGF2430A MGF2430A, 300mA GF-17 -j250 300mA) MGF2430A MGF2430 fet J 305 ku Band Power GaAs FET Gf-17
MGF2430 Abstract: MGF2430A Text: MITSUBISHI SEMICONDUCTOR <G aA s FET> M G F2430A MICROWAVE POWER GaAs FET DESCRIPTIO N The M G F 2 4 3 0 A , po w e r GaAs F E T w ith O U T LIN E DRAW ING an N-channel U n i t ' m ;H im e te r s s c h o ttk y gate, is designed fo r use in S to K u band a m p li	OCR Scan	PDF	F2430A MGF2430 MGF2430A
MGF2430A Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E	OCR Scan	PDF	12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F2430A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 3 0 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li fiers. FEATURES • High o u tp u t power • High pow er gain	OCR Scan	PDF	MGF2430A
2430A Abstract: MGFC2430 MGF2430A MGF2430 Text: A m it s u b is h i Die_ MGFC2430 Package F2430A ELECTRONIC DEVICE GROUP DESCRIPTION MGFC2430 FEATURES The MGFC2400 series GaAs FETs are N-channel Schottky gate devices designed for high frequency, medium and high power applications. • High output power	OCR Scan	PDF	MGFC2400 250mW* MGF2400 MGFC2430 MGF2430A 2430-T02 2430A MGF2430A MGF2430