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    EDI88512C Price and Stock

    EDI Diodes (Electronic Devices Inc) EDI88512CA17F32I

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    Bristol Electronics EDI88512CA17F32I 3
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    White Electronic Designs Corp EDI88512CA20NM

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components EDI88512CA20NM 8
    • 1 $105.7098
    • 10 $95.1388
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    EDI Diodes (Electronic Devices Inc) EDI88512CA20F36C

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    Quest Components EDI88512CA20F36C 1
    • 1 $279.2335
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    • 100 $279.2335
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    Microchip Technology Inc EDI88512C70CI

    SRAM Chip Async Single 5V 4M-Bit 512K x 8 70ns 32-Pin SBCDIP (Alt: EDI88512C70CI)
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    Avnet Silica EDI88512C70CI 61 Weeks 1
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    Microchip Technology Inc EDI88512C70NI

    WHIEDI88512C70NI (Alt: EDI88512C70NI)
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    Avnet Silica EDI88512C70NI 61 Weeks 1
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    EDI88512C Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDI88512C White Electronic Designs 512K x 8 Monolithic SRAM, CMOS Original PDF
    EDI88512C100CB White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C100CC White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C100CI White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C100CM White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C100NB White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C100NC White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C100NI White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C100NM White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C70CB White Microelectronics 70ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C70CC White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C70CI White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C70CM White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C70NB White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C70NC White Microelectronics 70ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512C70NI White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C70NM White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C85CB White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C85CC White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512C85CI White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    ...

    EDI88512C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD transistor n36

    Abstract: smd transistor A13 transistor smd f36 CERAMIC FLATPACK SMD a7 Transistor smd transistor A8 EDI88128CS EDI88512CA EDI88512LPA 5962-95600XXMYA
    Text: White Electronic Designs EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages


    Original     		PDF EDI88512CA 512Kx8 EDI88512CA EDI88128CS. 512Kx8 MIL-STD-883 SMD transistor n36 smd transistor A13 transistor smd f36 CERAMIC FLATPACK SMD a7 Transistor smd transistor A8 EDI88128CS EDI88512LPA 5962-95600XXMYA

    Untitled

    Abstract: No abstract text available
    Text: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages


    Original     		PDF EDI88512C 512Kx8 100ns EDI88512C EDI88128C.

    8 pin ceramic dip microsemi

    Abstract: CERAMIC FLATPACK
    Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM.  Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard


    Original     		PDF EDI88512CA 512Kx8 512Kx8 8 pin ceramic dip microsemi CERAMIC FLATPACK

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM.  Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard


    Original     		PDF EDI88512CA 512Kx8 EDI88512CA EDI88128CS. 512Kx8 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.


    Original     		PDF EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 EDI88512CA-XMXG MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs


    Original     		PDF EDI88512C 512Kx8 EDI88512C 100ns EDI88128C. EDI88512LP) 512Kx8 MIL-STD-883

    EDI88128C

    Abstract: EDI88512C
    Text: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs


    Original     		PDF EDI88512C 512Kx8 EDI88512C 100ns EDI88128C. EDI88512LP) 512Kx8 MIL-STD-883 EDI88128C

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI88512CA-RP 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.


    Original     		PDF 512Kx8 EDI88512CA-RP MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA-RP HI-RELIABILITY PRODUCT 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's a ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military


    Original     		PDF EDI88512CA-RP 512Kx8 MIL-STD-883

    EDI88128C

    Abstract: EDI88512C MIL-PRF38535
    Text: White Electronic Designs EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES „ 512Kx8 bit CMOS Static „ Random Access Memory The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and


    Original     		PDF EDI88512C 512Kx8 EDI88512C EDI88128C. 100ns EDI88512LP) 512Kx8 MIL-STD-883 EDI88128C MIL-PRF38535

    SMD transistor n36

    Abstract: smd transistor A13 transistor smd f36 EDI88128CS EDI88512CA EDI88512LPA
    Text: EDI88512CA HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages are pin for pin


    Original     		PDF EDI88512CA 512Kx8 EDI88512CA EDI88128CS. 512Kx8 MIL-STD-883 SMD transistor n36 smd transistor A13 transistor smd f36 EDI88128CS EDI88512LPA

    Untitled

    Abstract: No abstract text available
    Text: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages


    Original     		PDF EDI88512C 512Kx8 EDI88512C EDI88128C. 100ns EDI88512LP) MIL-PRF-38535.

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA White Electronic Designs 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  Data Retention Function LPA version  TTL Compatible Inputs and Outputs  Fully Static, No Clocks  Organized as 512Kx8


    Original     		PDF 512Kx8 EDI88512CA EDI88512CA MIL-STD-883

    512Kx8s

    Abstract: No abstract text available
    Text: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.


    Original     		PDF EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 512Kx8s

    EDI88512CA

    Abstract: EDI88128CS EDI8M8512C
    Text: EDI88512CA ELECTRONIC DESGNS IN C .1 Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA 512Kx EDI8M8512C. EDI88128CS. 0GC2022 EDI88128CS EDI8M8512C

    EDI88512CA20NB

    Abstract: EDI88512CA45 and45ns TM315
    Text: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. EDI88512CA20NB EDI88512CA45 and45ns TM315

    ED188512CA20N36B

    Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
    Text: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		PDF EDI88512CA 512Kx8 15qC/W 20X/W 01581USA EDIBB512CA 6/96ECO ED188512CA20N36B ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C

    75B7

    Abstract: EDI88512CA20MM EDI88512CA-RP EDI88512LPA EDI88512CA17MI
    Text: EDI88512CA-RP W 3 X e le c tro n ic designs, in c . 512Kx8 Ruggedized Plastic Static Ram 5 1 2 m Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­


    OCR Scan     		PDF EDI88512CA-RP 512Kx8 BB512CA-RP 6/96ECÅ EDI88512CA20MM 75B7 EDI88512CA-RP EDI88512LPA EDI88512CA17MI

    EDI88512LPA17NI

    Abstract: No abstract text available
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. 6/96ECO EDI88512LPA17NI

    7587 GE

    Abstract: EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512m Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 1T 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. 20VA/V 6/96ECO 7587 GE EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B

    EM 319

    Abstract: No abstract text available
    Text: %ED l EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram EIEO RO M C 0BM3N& M C. 512Kx8 Static RAM CMOS, Monolithic F ea tu re s EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic compo­


    OCR Scan     		PDF 512Kx8 EDI88512CA-RP EDI88512CA17MI EDI88512CA20MI EDI88512LPA20MM EDI88512LPA25MM EM 319

    EDI88512LPA17MI

    Abstract: 75B7 EDI88512CA-RP EDI88512LPA
    Text: W5X EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory T, 20 and 25ns • Access Times: 1 • Data Retention Function LPA version • Extended Temperature Testing


    OCR Scan     		PDF EDI88512CA-RP 512Kx8 EDI88512CA20MM EDI88512CA25MM EDI88512LPA20MM EDI88512LPA17MI 75B7 EDI88512CA-RP EDI88512LPA

    A35Z

    Abstract: EDI88512CA35CB EDI88512C
    Text: ^ED I EDI88512CA ELECTRONIC DESIGNS IN C • Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Ik M /h Features The ED I88512C A is a 4 m egabit M onolithic CMOS 512Kx8 bit CM OS Static S tatic RAM. Random Access M em ory • Access Tim es: 2 5 ,3 5 , and 45ns


    OCR Scan     		PDF EDI88512CA 512Kx8 I88512C 8512C. EDI88128CS. EDI88512CA25CB EDI88512CA25CC EDI88512CA25CI 006I0 A35Z EDI88512CA35CB EDI88512C

    IC 7587

    Abstract: No abstract text available
    Text: W EDI88512CA-RP 3 X 512Kx8 Ruggedized e le c tr o n ic designs, inc. Plastic Static Ram 512m Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­


    OCR Scan     		PDF EDI88512CA-RP 512Kx8 18VA/V EDI88512CA-RPRev. EDI88512CA-RP IC 7587