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    CY62148CV30 Search Results

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    CY62148CV30 Price and Stock

    Rochester Electronics LLC CY62148CV30LL-70BVI

    IC SRAM 4MBIT PARALLEL 36VFBGA
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    DigiKey CY62148CV30LL-70BVI Bulk 94
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    Rochester Electronics LLC CY62148CV30LL-55BAI

    IC SRAM 4MBIT PARALLEL 36BGA
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    DigiKey CY62148CV30LL-55BAI Bulk 120
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    Rochester Electronics LLC CY62148CV30LL-55BVI

    IC SRAM 4MBIT PARALLEL 36VFBGA
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    DigiKey CY62148CV30LL-55BVI Bulk 120
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    Cypress Semiconductor CY62148CV30LL-70BVI

    CY62148CV30LL-70BVI
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    Verical CY62148CV30LL-70BVI 10,133 104
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    CY62148CV30LL-70BVI 603 104
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    Rochester Electronics CY62148CV30LL-70BVI 10,736 1
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    Cypress Semiconductor CY62148CV30LL-55BVI

    CY62148CV30LL-55BVI
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    Verical CY62148CV30LL-55BVI 927 133
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    Rochester Electronics CY62148CV30LL-55BVI 927 1
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    CY62148CV30 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62148CV30 Cypress Semiconductor Original PDF
    CY62148CV30LL-55BAI Cypress Semiconductor Original PDF
    CY62148CV30LL-55BVI Cypress Semiconductor 512K x 8 MoBL Static RAM Original PDF
    CY62148CV30LL-70BAI Cypress Semiconductor Original PDF
    CY62148CV30LL-70BVI Cypress Semiconductor Original PDF

    CY62148CV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62148DV30 4-Mb 512K x 8 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C • Very high speed: 55 ns — Wide voltage range: 2.20V – 3.60V • Pin-compatible with CY62148CV25, CY62148CV30 and


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    PDF CY62148DV30 CY62148CV25, CY62148CV30 CY62148CV33 55-ns 36-ball 32-pin CY62148DV30

    CY62148CV25

    Abstract: CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30L CY62148DV30L-55BVI CY62148DV30LL
    Text: ADVANCE INFORMATION CY62148DV30 512K x 8 MoBL Static RAM Features • Very high speed: 55 ns — Wide voltage range: 2.20V 1– 3.60V • Pin-compatible with CY62148CV25, CY62148CV30, and CY62148CV33 • Ultra low active power — Typical active current:1.5 mA @ f = 1 MHz


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    PDF CY62148DV30 CY62148CV25, CY62148CV30, CY62148CV33 55-ns 36-ball 32-pin 32-pin CY62148DV30 CY62148CV25 CY62148CV30 CY62148CV33 CY62148DV30L CY62148DV30L-55BVI CY62148DV30LL

    Cypress touch

    Abstract: CY62148CV25 CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30L CY62148DV30LL CY62148DV30LL-55SXI VFBGA H1314
    Text: CY62148DV30 4-Mbit 512K x 8 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C • Very high speed: 55 ns — Wide voltage range: 2.20V – 3.60V • Pin-compatible with CY62148CV25, CY62148CV30 and


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    PDF CY62148DV30 CY62148CV25, CY62148CV30 CY62148CV33 CY62148DV30 Cypress touch CY62148CV25 CY62148CV33 CY62148DV30L CY62148DV30LL CY62148DV30LL-55SXI VFBGA H1314

    Untitled

    Abstract: No abstract text available
    Text:  CY62148DV30 4-Mbit 512K x 8 MoBL Static RAM Functional Description[1] Features • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Wide voltage range: 2.20 V – 3.60 V ■ Pin-compatible with CY62148CV25, CY62148CV30 and


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    PDF CY62148DV30 CY62148DV30 727-CY148DV30LL55SXI CY62148DV30LL-55SXI

    Untitled

    Abstract: No abstract text available
    Text:  CY62148DV30 4-Mbit 512 K x 8 MoBL Static RAM 4-Mbit (512 K × 8) MoBL® Static RAM Features • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Functional Description Wide voltage range: 2.20 V–3.60 V ■ Pin-compatible with CY62148CV25, CY62148CV30 and


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    PDF CY62148DV30

    CY62148CV25

    Abstract: CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30L CY62148DV30LL CY62148DV30LL-55BVI CY62148DV30LL-55BVXI
    Text: CY62148DV30 4-Mbit 512K x 8 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C • Very high speed: 55 ns — Wide voltage range: 2.20V – 3.60V • Pin-compatible with CY62148CV25, CY62148CV30 and


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    PDF CY62148DV30 CY62148CV25, CY62148CV30 CY62148CV33 CY62148DV30 32-pin CY62148CV25 CY62148CV33 CY62148DV30L CY62148DV30LL CY62148DV30LL-55BVI CY62148DV30LL-55BVXI

    CY62148DV30L-55ZSXI

    Abstract: CY62148DV30LL-70ZSXI CY62148CV25 CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30L CY62148DV30LL CY62148DV30LL-55BVI CY62148DV30LL-55BVXI
    Text: CY62148DV30 4-Mbit 512K x 8 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C • Very high speed: 55 ns — Wide voltage range: 2.20V – 3.60V • Pin-compatible with CY62148CV25, CY62148CV30 and


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    PDF CY62148DV30 CY62148CV25, CY62148CV30 CY62148CV33 CY62148DV30 32-pin CY62148DV30L-55ZSXI CY62148DV30LL-70ZSXI CY62148CV25 CY62148CV33 CY62148DV30L CY62148DV30LL CY62148DV30LL-55BVI CY62148DV30LL-55BVXI

    CY62148DV30LL-70BVXI

    Abstract: CY62148DV30L-55ZSXI CY62148CV25 CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30L CY62148DV30LL
    Text: CY62148DV30 4-Mb 512K x 8 MoBL Static RAM Functional Description[1] Features • Very high speed: 55 ns — Wide voltage range: 2.20V – 3.60V • Pin-compatible with CY62148CV25, CY62148CV30 and CY62148CV33 • Ultra low active power — Typical active current: 1.5 mA @ f = 1 MHz


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    PDF CY62148DV30 CY62148CV25, CY62148CV30 CY62148CV33 55-ns 36-ball 32-pin CY62148DV30 CY62148DV30LL-70BVXI CY62148DV30L-55ZSXI CY62148CV25 CY62148CV33 CY62148DV30L CY62148DV30LL

    2VCC-02

    Abstract: CY62148CV25 CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30LL CY62148DV30LL-55SXI
    Text:  CY62148DV30 4-Mbit 512K x 8 MoBL Static RAM Functional Description[1] Features • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Wide voltage range: 2.20 V – 3.60 V ■ Pin-compatible with CY62148CV25, CY62148CV30 and


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    PDF CY62148DV30 CY62148CV25, CY62148CV30 CY62148CV33 55-ns CY62148DV30 2VCC-02 CY62148CV25 CY62148CV33 CY62148DV30LL CY62148DV30LL-55SXI

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62148CV25/30/33 ADVANCE INFORMATION MoBL 512K x 8 MoBL Static RAM TM are not toggling. The device can be put into standby mode when deselected CE HIGH . Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O


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    PDF CY62148CV25/30/33 CY62148CV25: CY62148CV30: CY62148CV33:

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


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    PDF OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62148CV25/30/33 ADVANCE INFORMATION MoBL 512K x 8 MoBL Static RAM TM are not toggling. The device can be put into standby mode when deselected CE HIGH . Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O


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    PDF 1CY62148V CY62148CV25/30/33 CY62148CV25: CY62148CV30: CY62148CV33:

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


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    PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    CY62148CV25

    Abstract: CY62148CV30 CY62148CV33 CY62148V BA36B
    Text: CY62148CV25/30/33 MoBL 512K x 8 MoBL Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ MoBL™ in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode when deselected (CE HIGH).


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    PDF CY62148CV25/30/33 CY62148CV25: CY62148CV30: CY62148CV25/30/33 CY62148CV25 CY62148CV30 CY62148CV33 CY62148V BA36B

    CY62148CV30

    Abstract: CY62148V CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32
    Text: CY62148V MoBL 4M 512K x 8 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra low active power Low standby power TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a 32 pin TSOPII and a 32-pin SOIC


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    PDF CY62148V 32-pin CY62148CV30) CY62148CV30 CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32

    Untitled

    Abstract: No abstract text available
    Text: CY62148CV25/30/33 MoBL ADVANCE INFORMATION 512K x 8 MoBL Static RAM Features are not toggling. The device can be put into standby mode when deselected CE HIGH . • Low voltage range: — CY62148CV25: 2.2V–2.7V Writing to the device is accomplished by taking Chip Enable


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    PDF CY62148CV25/30/33 CY62148CV25: CY62148CV30: CY62148CV33:

    Cp5609amt

    Abstract: cp5858am CP5629BM CG5113 PCN030073 W48S111-14G 5L512 CY2292ASI CY2292SL-1V1 CY2292SC-68T
    Text: SEMICONDUCTOR FINAL PRODUCT CHANGE NOTIFICATION PCN: PCN030073 DATE: November 7, 2003 Subject: Prune List Q4, 2003 To: Description of Change: Cypress is officially announcing the obsolescence of these products. Refer to the attached list for the list of products being discontinued.


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    PDF PCN030073 reprrese1/03/03 Cp5609amt cp5858am CP5629BM CG5113 PCN030073 W48S111-14G 5L512 CY2292ASI CY2292SL-1V1 CY2292SC-68T

    CY62148CV30

    Abstract: CY62148V CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32
    Text: CY62148V MoBL 4M 512K x 8 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra low active power Low standby power TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a 32 pin TSOPII and a 32-pin SOIC


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    PDF CY62148V 32-pin CY62148CV30) CY62148CV30 CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32

    CY62148CV25

    Abstract: CY62148CV30 CY62148CV33 CY62148V
    Text: CY62148CV25/30/33 MoBL 512K x 8 MoBL Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ MoBL™ in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode when deselected (CE HIGH).


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    PDF CY62148CV25/30/33 CY62148CV25: CY62148CV30: CY62148CV25/30/33 CY62148CV25 CY62148CV30 CY62148CV33 CY62148V